TY - JOUR
T1 - Probing Exciton Move and Localization in Solution-Grown Colloidal CdSexS1-x Alloyed Nanowires by Temperature- and Time-Resolved Spectroscopy
AU - Yang, Gaoling
AU - Ma, Zongwei
AU - Zhong, Haizheng
AU - Zou, Shuangyang
AU - Chen, Cheng
AU - Han, Junbo
AU - Zou, Bingsuo
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/9/14
Y1 - 2015/9/14
N2 - Colloidal semiconductor nanowires are interesting materials with polarized optical feature for optoelectronics devices. Previously, we observed an interesting photoluminescence enhancement in colloidal alloyed CdSexS1-x nanowires. In the present work, low temperature steady-state and time-resolved photoluminescence spectra were applied to understand the photoluminescence enhancement in these CdSexS1-x alloyed nanowires. The band-edge emission and surface-defect emission of alloyed CdSexS1-x nanowires, observed in low temperature photoluminescence spectra, show different changing trend with the variation of their composition. Moreover, the radiative lifetime for band-edge emission and surface-defect emission reveals an opposite changing trend with the variation of temperature. These findings suggest that the variation of photoluminescence quantum yields with composition is determined by the competition between exciton move and localization. If the carriers are localized in the interior of nanowires, the migration of photoinduced excitons to their surface will be prohibited, and more probability for radiative recombination at band edge occurred.
AB - Colloidal semiconductor nanowires are interesting materials with polarized optical feature for optoelectronics devices. Previously, we observed an interesting photoluminescence enhancement in colloidal alloyed CdSexS1-x nanowires. In the present work, low temperature steady-state and time-resolved photoluminescence spectra were applied to understand the photoluminescence enhancement in these CdSexS1-x alloyed nanowires. The band-edge emission and surface-defect emission of alloyed CdSexS1-x nanowires, observed in low temperature photoluminescence spectra, show different changing trend with the variation of their composition. Moreover, the radiative lifetime for band-edge emission and surface-defect emission reveals an opposite changing trend with the variation of temperature. These findings suggest that the variation of photoluminescence quantum yields with composition is determined by the competition between exciton move and localization. If the carriers are localized in the interior of nanowires, the migration of photoinduced excitons to their surface will be prohibited, and more probability for radiative recombination at band edge occurred.
UR - http://www.scopus.com/inward/record.url?scp=84944345413&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.5b07198
DO - 10.1021/acs.jpcc.5b07198
M3 - Article
AN - SCOPUS:84944345413
SN - 1932-7447
VL - 119
SP - 22709
EP - 22717
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 39
ER -