Preparation of carbon nitride films with high nitrogen content by electrodeposition from an organic solution

Qiang Fu; Chuan Bao Cao; H. E.Sun Zhu

doi:10.1023/A:1006682031441

Preparation of carbon nitride films with high nitrogen content by electrodeposition from an organic solution

Qiang Fu, Chuan Bao Cao, H. E.Sun Zhu

School of Material Science and Engineering

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

CN_x films with high nitrogen content were prepared by the use of liquid phase electrodeposition from a dicyandiamide precursor. The deposited CN_x films contain a high nitrogen content at about 48 at%. Single, double bonds, and a certain amount of triple bonds coexist in the films. Post-deposition thermal treatments promoted the formation of C-N bonds and induced film structural changes.

Original language	English
Pages (from-to)	1485-1488
Number of pages	4
Journal	Journal of Materials Science Letters
Volume	18
Issue number	18
DOIs	https://doi.org/10.1023/A:1006682031441
Publication status	Published - 1 Jan 1999

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title = "Preparation of carbon nitride films with high nitrogen content by electrodeposition from an organic solution",

abstract = "CNx films with high nitrogen content were prepared by the use of liquid phase electrodeposition from a dicyandiamide precursor. The deposited CNx films contain a high nitrogen content at about 48 at%. Single, double bonds, and a certain amount of triple bonds coexist in the films. Post-deposition thermal treatments promoted the formation of C-N bonds and induced film structural changes.",

author = "Qiang Fu and Cao, {Chuan Bao} and Zhu, {H. E.Sun}",

year = "1999",

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AU - Fu, Qiang

AU - Cao, Chuan Bao

AU - Zhu, H. E.Sun

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Y1 - 1999/1/1

N2 - CNx films with high nitrogen content were prepared by the use of liquid phase electrodeposition from a dicyandiamide precursor. The deposited CNx films contain a high nitrogen content at about 48 at%. Single, double bonds, and a certain amount of triple bonds coexist in the films. Post-deposition thermal treatments promoted the formation of C-N bonds and induced film structural changes.

AB - CNx films with high nitrogen content were prepared by the use of liquid phase electrodeposition from a dicyandiamide precursor. The deposited CNx films contain a high nitrogen content at about 48 at%. Single, double bonds, and a certain amount of triple bonds coexist in the films. Post-deposition thermal treatments promoted the formation of C-N bonds and induced film structural changes.

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U2 - 10.1023/A:1006682031441

DO - 10.1023/A:1006682031441

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SP - 1485

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JO - Journal of Materials Science Letters

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ER -

Preparation of carbon nitride films with high nitrogen content by electrodeposition from an organic solution

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