Preparation, Characterization, and Simulation Prediction of MoS₂ Transistors

The advent of molybdenum disulfide (MoS₂) offers hope for transistor continuous scaling. In this study, the back-gate monolayer MoS₂ transistors at different channel lengths are prepared, and their electrical properties are tested, respectively. The back-gate MoS₂ transistor exhibits a maximum conducting current of 4.59μ A and a switching ratio of 2.3× 10⁵. The ratio of contact resistance to the total resistance is up to 33%, indicating that the contact between MoS₂ and the electrode is one of the main factors restricting its performance. Technology Computer-Aided Design (TCAD) simulations are also used to predict the performance of a smaller channel-length MoS₂ transistor (L_g =12 nm). We set the MoS₂ material parameters and construct a monolayer MoS₂ nanosheet FET (NSFET) using TCAD. The simulation result of this structure shows a subthreshold swing (SS) of 68.9 mV/dec, a drain-induced barrier lowering (DIBL) value of 14.98 mV/V and a conduction current of 243.3 μA/μm at the gate voltage of 0.7V. By comparing its performance with the most advanced silicon-based devices, MoS₂ exhibits excellent electrostatic properties and holds great potential for replacing silicon as a channel material.