Preparation and microstructural properties of gallium doped zinc oxide thin films for organic solar cells

C. Lan, H. Wang, Z. Y. Zhong, T. Zhang, C. Y. Yang, J. Hou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Transparent conducting gallium doped zinc oxide (GaZnO) films were prepared by magnetron sputtering technique. The influence of growth temperature on the microstructural and optical properties of the films were investigated by means of X-ray diffraction (XRD), spectrophotometer and optical characterization method, respectively. The results show that all the samples are polycrystalline in nature having a hexagonal wurtzite type crystal structure with a preferred grain orientation in the (002) direction. The growth temperature significantly affects the crystal structure and optical properties of the samples. The film deposited at the growth temperature of 670 K possesses the largest grain grain, the minimum dislocation density and the lowest microstrain. The average visible transmittance and optical energy gap of the samples increase gradually with the increment of growth temperature.

Original languageEnglish
Title of host publicationMaterial Science, Manufacturing Technology and Advanced Design Technology
PublisherTrans Tech Publications
Pages25-28
Number of pages4
ISBN (Print)9783038350460
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event3rd International Conference on Materials Science and Manufacturing, ICMSM 2014 - Yichang, China
Duration: 10 Jan 201412 Jan 2014

Publication series

NameAdvanced Materials Research
Volume904
ISSN (Print)1022-6680

Conference

Conference3rd International Conference on Materials Science and Manufacturing, ICMSM 2014
Country/TerritoryChina
CityYichang
Period10/01/1412/01/14

Keywords

  • Magnetron sputtering
  • Microstructure
  • Optical properties
  • Zinc oxide thin film

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