Preparation and characterization of CdSe nanoparticles in the presence of Triocytlphosphine as solvent and capping agent

Shutang Chen; Xiaoling Zhang; Yanbing Zhao; Jilin Yan; Weihong Tan

doi:10.1016/j.matlet.2008.12.034

Preparation and characterization of CdSe nanoparticles in the presence of Triocytlphosphine as solvent and capping agent

Shutang Chen, Xiaoling Zhang^*, Yanbing Zhao, Jilin Yan, Weihong Tan

^*Corresponding author for this work

School of Chemistry and Chemical Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Triocytlphosphine (TOP)-capped CdSe nanoparticles (NPs) have been successfully prepared by the one-pot solution growth method at 240 °C under argon atmosphere. In particular, The TOP used in this process as the single coordinating solvent is favorable for probing capping mechanism of CdSe NPs surface. The growth process and characterization of CdSe NPs were determined by photoluminescence (PL) spectroscopy, X-ray diffraction (XRD), Transmission electron microscopy (TEM), Ultraviolet-visible (UV-Vis) spectroscopy and Fourier transform infrared spectroscopy (FTIR). Results demonstrated the TOP-capped CdSe NPs to be well dispersed and uniform in shape and the diameter of the particle was confined within 8 nm. PL measurement showed the near band-edge luminescence of the final product.

Original language	English
Pages (from-to)	712-714
Number of pages	3
Journal	Materials Letters
Volume	63
Issue number	8
DOIs	https://doi.org/10.1016/j.matlet.2008.12.034
Publication status	Published - 31 Mar 2009

Keywords

CdSe
Nanomaterials
Semiconductors

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10.1016/j.matlet.2008.12.034

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abstract = "Triocytlphosphine (TOP)-capped CdSe nanoparticles (NPs) have been successfully prepared by the one-pot solution growth method at 240 °C under argon atmosphere. In particular, The TOP used in this process as the single coordinating solvent is favorable for probing capping mechanism of CdSe NPs surface. The growth process and characterization of CdSe NPs were determined by photoluminescence (PL) spectroscopy, X-ray diffraction (XRD), Transmission electron microscopy (TEM), Ultraviolet-visible (UV-Vis) spectroscopy and Fourier transform infrared spectroscopy (FTIR). Results demonstrated the TOP-capped CdSe NPs to be well dispersed and uniform in shape and the diameter of the particle was confined within 8 nm. PL measurement showed the near band-edge luminescence of the final product.",

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T1 - Preparation and characterization of CdSe nanoparticles in the presence of Triocytlphosphine as solvent and capping agent

AU - Chen, Shutang

AU - Zhang, Xiaoling

AU - Zhao, Yanbing

AU - Yan, Jilin

AU - Tan, Weihong

PY - 2009/3/31

Y1 - 2009/3/31

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AB - Triocytlphosphine (TOP)-capped CdSe nanoparticles (NPs) have been successfully prepared by the one-pot solution growth method at 240 °C under argon atmosphere. In particular, The TOP used in this process as the single coordinating solvent is favorable for probing capping mechanism of CdSe NPs surface. The growth process and characterization of CdSe NPs were determined by photoluminescence (PL) spectroscopy, X-ray diffraction (XRD), Transmission electron microscopy (TEM), Ultraviolet-visible (UV-Vis) spectroscopy and Fourier transform infrared spectroscopy (FTIR). Results demonstrated the TOP-capped CdSe NPs to be well dispersed and uniform in shape and the diameter of the particle was confined within 8 nm. PL measurement showed the near band-edge luminescence of the final product.

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KW - Nanomaterials

KW - Semiconductors

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Preparation and characterization of CdSe nanoparticles in the presence of Triocytlphosphine as solvent and capping agent

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