Preparation and characterization of CdS nano film by CRBRCP-EDTA process

The CdS nano film was prepared by CRBRCP-EDTA process, and the phase, structure and morphology of the nano film was characterized by XRD and SEM. The results showed that the nano film formed well when using conductive glass and monocrystalline silicon wafer as a basement, the film can not formed with aluminium sheet. Both the conductive glass-based and the monocrystalline silicon wafer-based nano film was double-layer structure. The thickness of lower layer of the conductive glass-based film was about 40~50 nm, 450~500 nm with upper layer and 500~550 nm with the total film; for the monocrystalline silicon wafer-based nano film, the thickness of both layer was about 300 nm, 600~650 nm with the total film. The increase of Cd²⁺ dose and addition of PAM were benefit to the preparation of the conductive glass-based nano film, leading to improvement of the formed nano film in compactness, uniformity and photocatalytic activity.