Abstract
A novel method is proposed to simulate the intrinsic thermal conductivity of the phonons in dielectric and semiconductor materials by introducing the concept of the density of the lattice vibration energy, which is a function of frequency and temperature. A quantitative relationship between the density of the lattice vibration energy and the mean free path of the phonons is established. The heat capacity and sound velocity can also be calculated by using the phonon density of states, the theoretical densities, and the elastic modulus. The thermal conductivities of some typical dielectric and semiconductor materials are then calculated, and it is found that the agreement with experimental data is good for some materials. In contrast to traditional semi-empirical methods, there is no need to input any experimental data.
| Original language | English |
|---|---|
| Pages (from-to) | 1129-1132 |
| Number of pages | 4 |
| Journal | Molecular Simulation |
| Volume | 34 |
| Issue number | 10-15 |
| DOIs | |
| Publication status | Published - Sept 2008 |
Keywords
- Density of lattice vibration energy
- Mean free path of phonons
- Thermal conductivity of phonons
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