Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

Guanhua Yang; Yan Shao; Jiebin Niu; Xiaolei Ma; Congyan Lu; Wei Wei; Xichen Chuai; Jiawei Wang; Jingchen Cao; Hao Huang; Guangwei Xu; Xuewen Shi; Zhuoyu Ji; Nianduan Lu; Di Geng; Jing Qi; Yun Cao; Zhongliu Liu; Liwei Liu; Yuan Huang; Lei Liao; Weiqi Dang; Zhengwei Zhang; Yuan Liu; Xidong Duan; Jiezhi Chen; Zhiqiang Fan; Xiangwei Jiang; Yeliang Wang; Ling Li; Hong Jun Gao; Xiangfeng Duan; Ming Liu

doi:10.1038/s41467-020-14383-0

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

Guanhua Yang
, Yan Shao
, Jiebin Niu
, Xiaolei Ma
, Congyan Lu
, Wei Wei
, Xichen Chuai
, Jiawei Wang
, Jingchen Cao
, Hao Huang
, Guangwei Xu
, Xuewen Shi
, Zhuoyu Ji
, Nianduan Lu
, Di Geng
, Jing Qi
, Yun Cao
, Zhongliu Liu
, Liwei Liu
, Yuan Huang

Lei Liao, Weiqi Dang, Zhengwei Zhang, Yuan Liu, Xidong Duan, Jiezhi Chen, Zhiqiang Fan, Xiangwei Jiang, Yeliang Wang, Ling Li^*, Hong Jun Gao, Xiangfeng Duan, Ming Liu

^*Corresponding author for this work

Key Laboratory of Microelectronic Devices & Integrated Technology
CAS - Institute of Microelectronics
CAS - Institute of Physics
Beijing Institute of Technology
Shandong University
CAS - Institute of Semiconductors
Wuhan University
State Key Laboratory for Chemo/Biosensing and Chemometrics
Hunan University
University of California

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS₂/WSe₂ field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.

Original language	English
Article number	659
Journal	Nature Communications
Volume	11
Issue number	1
DOIs	https://doi.org/10.1038/s41467-020-14383-0
Publication status	Published - 1 Dec 2020
Externally published	Yes

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10.1038/s41467-020-14383-0

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Yang, G., Shao, Y., Niu, J., Ma, X., Lu, C., Wei, W., Chuai, X., Wang, J., Cao, J., Huang, H., Xu, G., Shi, X., Ji, Z., Lu, N., Geng, D., Qi, J., Cao, Y., Liu, Z., Liu, L., ... Liu, M. (2020). Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals. Nature Communications , 11(1), Article 659. https://doi.org/10.1038/s41467-020-14383-0

@article{555b4bf3b8d84309a1ee0c81eccb8793,

title = "Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals",

abstract = "In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.",

author = "Guanhua Yang and Yan Shao and Jiebin Niu and Xiaolei Ma and Congyan Lu and Wei Wei and Xichen Chuai and Jiawei Wang and Jingchen Cao and Hao Huang and Guangwei Xu and Xuewen Shi and Zhuoyu Ji and Nianduan Lu and Di Geng and Jing Qi and Yun Cao and Zhongliu Liu and Liwei Liu and Yuan Huang and Lei Liao and Weiqi Dang and Zhengwei Zhang and Yuan Liu and Xidong Duan and Jiezhi Chen and Zhiqiang Fan and Xiangwei Jiang and Yeliang Wang and Ling Li and Gao, \{Hong Jun\} and Xiangfeng Duan and Ming Liu",

note = "Publisher Copyright: {\textcopyright} 2020, The Author(s).",

year = "2020",

month = dec,

day = "1",

doi = "10.1038/s41467-020-14383-0",

language = "English",

volume = "11",

journal = "Nature Communications ",

issn = "2041-1723",

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Yang, G, Shao, Y, Niu, J, Ma, X, Lu, C, Wei, W, Chuai, X, Wang, J, Cao, J, Huang, H, Xu, G, Shi, X, Ji, Z, Lu, N, Geng, D, Qi, J, Cao, Y, Liu, Z, Liu, L , Huang, Y, Liao, L, Dang, W, Zhang, Z, Liu, Y, Duan, X, Chen, J, Fan, Z, Jiang, X, Wang, Y, Li, L, Gao, HJ, Duan, X & Liu, M 2020, 'Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals', Nature Communications , vol. 11, no. 1, 659. https://doi.org/10.1038/s41467-020-14383-0

TY - JOUR

T1 - Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

AU - Yang, Guanhua

AU - Shao, Yan

AU - Niu, Jiebin

AU - Ma, Xiaolei

AU - Lu, Congyan

AU - Wei, Wei

AU - Chuai, Xichen

AU - Wang, Jiawei

AU - Cao, Jingchen

AU - Huang, Hao

AU - Xu, Guangwei

AU - Shi, Xuewen

AU - Ji, Zhuoyu

AU - Lu, Nianduan

AU - Geng, Di

AU - Qi, Jing

AU - Cao, Yun

AU - Liu, Zhongliu

AU - Liu, Liwei

AU - Huang, Yuan

AU - Liao, Lei

AU - Dang, Weiqi

AU - Zhang, Zhengwei

AU - Liu, Yuan

AU - Duan, Xidong

AU - Chen, Jiezhi

AU - Fan, Zhiqiang

AU - Jiang, Xiangwei

AU - Wang, Yeliang

AU - Li, Ling

AU - Gao, Hong Jun

AU - Duan, Xiangfeng

AU - Liu, Ming

PY - 2020/12/1

Y1 - 2020/12/1

N2 - In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.

AB - In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate the charge transport properties of the entire device. However, the influence of the edge states on electrical transport in 2D materials has not been sufficiently explored to date. Here, we systematically quantify the edge state contribution to electrical transport in monolayer MoS2/WSe2 field-effect transistors, revealing that the charge transport at low temperature is dominated by the edge conduction with the nonlinear behavior. The metallic edge states are revealed by scanning probe microscopy, scanning Kelvin probe force microscopy and first-principle calculations. Further analyses demonstrate that the edge-state dominated nonlinear transport shows a universal power-law scaling relationship with both temperature and bias voltage, which can be well explained by the 1D Luttinger liquid theory. These findings demonstrate the Luttinger liquid behavior in 2D materials and offer important insights into designing 2D electronics.

UR - https://www.scopus.com/pages/publications/85078840791

U2 - 10.1038/s41467-020-14383-0

DO - 10.1038/s41467-020-14383-0

M3 - Article

C2 - 32005802

AN - SCOPUS:85078840791

SN - 2041-1723

VL - 11

JO - Nature Communications

JF - Nature Communications

IS - 1

M1 - 659

ER -

Possible Luttinger liquid behavior of edge transport in monolayer transition metal dichalcogenide crystals

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