Polarization effects induced by the bi-layer attenuated phase-shiftmask and their impacts on near-field distribution

As ArF projection lithography is approaching 45 nm technology node and beyond, polarization effectsinduced by mask are remarkable. At this mask dimension, traditional Kirchhoff approximation is invalid.Rigorous mask model is needed for accurate evaluation of mask diffraction. In previous works, manyresearchers are focus on the single grating layer diffraction. In this paper, Lee's formulation based onrigorous coupled wave analysis is applied to simulate the bi-layer grating diffraction in lithography.Then, polarization states as function of mask and incident light properties are evaluated. At last, theimpacts on near-field distribution with different polarization state are further investigated. The imagequality becomes worse under TE polarization, when Ta thickness becomes 35 nm, where the phase effectsare effectively reduced. There should be a tradeoff between them.Crown