Piezoresistance behaviors of ultra-strained SiC nanowires

Ruiwen Shao; Kun Zheng; Yuefei Zhang; Yujie Li; Ze Zhang; Xiaodong Han

doi:10.1063/1.4769217

Piezoresistance behaviors of ultra-strained SiC nanowires

Ruiwen Shao
, Kun Zheng^*
, Yuefei Zhang
, Yujie Li
, Ze Zhang
, Xiaodong Han

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10 was achieved for a diamond-structure SiC NW with a 111 direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was -1.15 × 10^-11 Pa^-1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.

Original language	English
Article number	233109
Journal	Applied Physics Letters
Volume	101
Issue number	23
DOIs	https://doi.org/10.1063/1.4769217
Publication status	Published - 3 Dec 2012
Externally published	Yes

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title = "Piezoresistance behaviors of ultra-strained SiC nanowires",

abstract = "In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10 was achieved for a diamond-structure SiC NW with a 111 direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was -1.15 × 10-11 Pa-1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.",

author = "Ruiwen Shao and Kun Zheng and Yuefei Zhang and Yujie Li and Ze Zhang and Xiaodong Han",

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T1 - Piezoresistance behaviors of ultra-strained SiC nanowires

AU - Shao, Ruiwen

AU - Zheng, Kun

AU - Zhang, Yuefei

AU - Li, Yujie

AU - Zhang, Ze

AU - Han, Xiaodong

PY - 2012/12/3

Y1 - 2012/12/3

N2 - In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10 was achieved for a diamond-structure SiC NW with a 111 direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was -1.15 × 10-11 Pa-1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.

AB - In situ electrical measurement experiments were carried out in individual SiC nanowires (NWs) subjected to tensile strain using a transmission electron microscope. Fracture strain approaching 10 was achieved for a diamond-structure SiC NW with a 111 direction. With an increase in the tensile strain, the conductance increased monotonously. The current rate of increase remained constant prior to fracture. The calculated piezoresistance coefficient of this SiC NW was -1.15 × 10-11 Pa-1, which is similar to the coefficient of the bulk material. Our results indicate that these SiC NWs can be used as pressure sensors even in very high-pressure environments.

UR - https://www.scopus.com/pages/publications/84870898123

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VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 233109

ER -

Piezoresistance behaviors of ultra-strained SiC nanowires

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