Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition

Y. Q. Wang; R. Z. Wang; B. B. Wang; B. Wang; H. Yan

doi:10.1364/n3.2013.nsa4a.2

Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition

Y. Q. Wang
, R. Z. Wang^*
, B. B. Wang
, B. Wang
, H. Yan

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Gallium n itride nanowires (GaN NWs) were synthesized by plasma-enhanced hot filament chemical vapor deposition. The structures and photoluminescence properties were measured and analyzed.

Original language	English
Title of host publication	Nanophotonics, Nanoelectronics and Nanosensor, N3 2013
Publisher	Optical Society of America (OSA)
Pages	NSa4A.2
ISBN (Print)	9781557529763
DOIs	https://doi.org/10.1364/n3.2013.nsa4a.2
Publication status	Published - 2013
Externally published	Yes
Event	Nanophotonics, Nanoelectronics and Nanosensor, N3 2013 - Wuhan, China Duration: 25 May 2013 → 26 May 2013

Publication series

Name	Nanophotonics, Nanoelectronics and Nanosensor, N3 2013

Conference

Conference	Nanophotonics, Nanoelectronics and Nanosensor, N3 2013
Country/Territory	China
City	Wuhan
Period	25/05/13 → 26/05/13

Access to Document

10.1364/n3.2013.nsa4a.2

Cite this

Wang, Y. Q., Wang, R. Z., Wang, B. B., Wang, B., & Yan, H. (2013). Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition. In Nanophotonics, Nanoelectronics and Nanosensor, N3 2013 (pp. NSa4A.2). (Nanophotonics, Nanoelectronics and Nanosensor, N3 2013). Optical Society of America (OSA). https://doi.org/10.1364/n3.2013.nsa4a.2

@inproceedings{40a200b05c4a4fcf995694538429079a,

title = "Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition",

abstract = "Gallium n itride nanowires (GaN NWs) were synthesized by plasma-enhanced hot filament chemical vapor deposition. The structures and photoluminescence properties were measured and analyzed.",

author = "Wang, \{Y. Q.\} and Wang, \{R. Z.\} and Wang, \{B. B.\} and B. Wang and H. Yan",

year = "2013",

doi = "10.1364/n3.2013.nsa4a.2",

language = "English",

isbn = "9781557529763",

series = "Nanophotonics, Nanoelectronics and Nanosensor, N3 2013",

publisher = "Optical Society of America (OSA)",

pages = "NSa4A.2",

booktitle = "Nanophotonics, Nanoelectronics and Nanosensor, N3 2013",

note = "Nanophotonics, Nanoelectronics and Nanosensor, N3 2013 ; Conference date: 25-05-2013 Through 26-05-2013",

}

Wang, YQ, Wang, RZ, Wang, BB, Wang, B & Yan, H 2013, Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition. in Nanophotonics, Nanoelectronics and Nanosensor, N3 2013. Nanophotonics, Nanoelectronics and Nanosensor, N3 2013, Optical Society of America (OSA), pp. NSa4A.2, Nanophotonics, Nanoelectronics and Nanosensor, N3 2013, Wuhan, China, 25/05/13. https://doi.org/10.1364/n3.2013.nsa4a.2

Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition. / Wang, Y. Q.; Wang, R. Z.; Wang, B. B. et al.
Nanophotonics, Nanoelectronics and Nanosensor, N3 2013. Optical Society of America (OSA), 2013. p. NSa4A.2 (Nanophotonics, Nanoelectronics and Nanosensor, N3 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition

AU - Wang, Y. Q.

AU - Wang, R. Z.

AU - Wang, B. B.

AU - Wang, B.

AU - Yan, H.

PY - 2013

Y1 - 2013

N2 - Gallium n itride nanowires (GaN NWs) were synthesized by plasma-enhanced hot filament chemical vapor deposition. The structures and photoluminescence properties were measured and analyzed.

AB - Gallium n itride nanowires (GaN NWs) were synthesized by plasma-enhanced hot filament chemical vapor deposition. The structures and photoluminescence properties were measured and analyzed.

UR - https://www.scopus.com/pages/publications/84887632572

U2 - 10.1364/n3.2013.nsa4a.2

DO - 10.1364/n3.2013.nsa4a.2

M3 - Conference contribution

AN - SCOPUS:84887632572

SN - 9781557529763

T3 - Nanophotonics, Nanoelectronics and Nanosensor, N3 2013

SP - NSa4A.2

BT - Nanophotonics, Nanoelectronics and Nanosensor, N3 2013

PB - Optical Society of America (OSA)

T2 - Nanophotonics, Nanoelectronics and Nanosensor, N3 2013

Y2 - 25 May 2013 through 26 May 2013

ER -

Photoluminescence properties of gallium nitride nanowires grown by plasma-enhanced hot filament chemical vapor deposition

Abstract

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