Photoluminescence and hydrogen storage properties of gallium nitride hexagonal micro-bricks

Ghulam Nabi; Chuanbao Cao; Sajad Hussain; Waheed S. Khan; Tariq Mehmood; Zahid Usman; Zulfiqar Ali; Faheem K. Butt; Yan Fu; Jili Li; M. Zubair Iqbal

doi:10.1016/j.matlet.2012.03.113

Photoluminescence and hydrogen storage properties of gallium nitride hexagonal micro-bricks

Ghulam Nabi, Chuanbao Cao^*, Sajad Hussain, Waheed S. Khan, Tariq Mehmood, Zahid Usman, Zulfiqar Ali, Faheem K. Butt, Yan Fu, Jili Li, M. Zubair Iqbal

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

A novel morphology of gallium nitride (GaN) hexagonal micro-bricks has been synthesized at 1250°C by chemical vapor deposition (CVD) method. Photoluminescence (PL) and hydrogen storage capabilities of hexagonal micro-bricks have been investigated. The PL spectrum exhibits strong near-band-edge emission at 369 nm (3.36 eV). Defect related broad yellow band emission at 556 nm (2.23 eV) has also been observed, which plays significant role in the hydrogen absorption. Maximum hydrogen storage capacity of 1.68 wt.% has been achieved under the pressure of 5 MPa and at 373 K. During desorption process under ambient pressure, about 76% releasing of the stored hydrogen has been noted. Highly reversible absorption/desorption results exhibited by GaN hexagonal micro-bricks are encouraging and promising for hydrogen storage.

Original language	English
Pages (from-to)	212-215
Number of pages	4
Journal	Materials Letters
Volume	79
DOIs	https://doi.org/10.1016/j.matlet.2012.03.113
Publication status	Published - 15 Jul 2012

Keywords

Chemical vapor deposition
Defects
Hydrogen storage properties
Semiconductors

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10.1016/j.matlet.2012.03.113

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title = "Photoluminescence and hydrogen storage properties of gallium nitride hexagonal micro-bricks",

abstract = "A novel morphology of gallium nitride (GaN) hexagonal micro-bricks has been synthesized at 1250°C by chemical vapor deposition (CVD) method. Photoluminescence (PL) and hydrogen storage capabilities of hexagonal micro-bricks have been investigated. The PL spectrum exhibits strong near-band-edge emission at 369 nm (3.36 eV). Defect related broad yellow band emission at 556 nm (2.23 eV) has also been observed, which plays significant role in the hydrogen absorption. Maximum hydrogen storage capacity of 1.68 wt.% has been achieved under the pressure of 5 MPa and at 373 K. During desorption process under ambient pressure, about 76% releasing of the stored hydrogen has been noted. Highly reversible absorption/desorption results exhibited by GaN hexagonal micro-bricks are encouraging and promising for hydrogen storage.",

keywords = "Chemical vapor deposition, Defects, Hydrogen storage properties, Semiconductors",

author = "Ghulam Nabi and Chuanbao Cao and Sajad Hussain and Khan, {Waheed S.} and Tariq Mehmood and Zahid Usman and Zulfiqar Ali and Butt, {Faheem K.} and Yan Fu and Jili Li and Iqbal, {M. Zubair}",

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doi = "10.1016/j.matlet.2012.03.113",

language = "English",

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journal = "Materials Letters",

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T1 - Photoluminescence and hydrogen storage properties of gallium nitride hexagonal micro-bricks

AU - Nabi, Ghulam

AU - Cao, Chuanbao

AU - Hussain, Sajad

AU - Khan, Waheed S.

AU - Mehmood, Tariq

AU - Usman, Zahid

AU - Ali, Zulfiqar

AU - Butt, Faheem K.

AU - Fu, Yan

AU - Li, Jili

AU - Iqbal, M. Zubair

PY - 2012/7/15

Y1 - 2012/7/15

N2 - A novel morphology of gallium nitride (GaN) hexagonal micro-bricks has been synthesized at 1250°C by chemical vapor deposition (CVD) method. Photoluminescence (PL) and hydrogen storage capabilities of hexagonal micro-bricks have been investigated. The PL spectrum exhibits strong near-band-edge emission at 369 nm (3.36 eV). Defect related broad yellow band emission at 556 nm (2.23 eV) has also been observed, which plays significant role in the hydrogen absorption. Maximum hydrogen storage capacity of 1.68 wt.% has been achieved under the pressure of 5 MPa and at 373 K. During desorption process under ambient pressure, about 76% releasing of the stored hydrogen has been noted. Highly reversible absorption/desorption results exhibited by GaN hexagonal micro-bricks are encouraging and promising for hydrogen storage.

AB - A novel morphology of gallium nitride (GaN) hexagonal micro-bricks has been synthesized at 1250°C by chemical vapor deposition (CVD) method. Photoluminescence (PL) and hydrogen storage capabilities of hexagonal micro-bricks have been investigated. The PL spectrum exhibits strong near-band-edge emission at 369 nm (3.36 eV). Defect related broad yellow band emission at 556 nm (2.23 eV) has also been observed, which plays significant role in the hydrogen absorption. Maximum hydrogen storage capacity of 1.68 wt.% has been achieved under the pressure of 5 MPa and at 373 K. During desorption process under ambient pressure, about 76% releasing of the stored hydrogen has been noted. Highly reversible absorption/desorption results exhibited by GaN hexagonal micro-bricks are encouraging and promising for hydrogen storage.

KW - Chemical vapor deposition

KW - Defects

KW - Hydrogen storage properties

KW - Semiconductors

UR - http://www.scopus.com/inward/record.url?scp=84861631055&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2012.03.113

DO - 10.1016/j.matlet.2012.03.113

M3 - Article

AN - SCOPUS:84861631055

SN - 0167-577X

VL - 79

SP - 212

EP - 215

JO - Materials Letters

JF - Materials Letters

ER -

Photoluminescence and hydrogen storage properties of gallium nitride hexagonal micro-bricks

Abstract

Keywords

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