Performance enhancement of IGZO thin-film transistors via ultra-thin HfO₂ and the implementation of logic device functionality

The enhancement of mobility has always been a research focus in the field of thin-film transistors (TFTs). In this paper, we report a method using ultra-thin HfO₂ to improve the electrical performance of indium gallium zinc oxide (IGZO) TFTs. HfO₂ not only repairs the surface morphology of the active layer, but also increases the carrier concentration. When the thickness of the HfO₂ film was 3 nm, the mobility of the device was doubled (14.9 cm²·V⁻¹·s⁻¹ → 29.6 cm²·V⁻¹·s⁻¹), and the device exhibited excellent logic device performance. This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs, offering new ideas and experimental foundation for research into high-performance metal oxide (MO) TFTs.