Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process

Yilin Sun; Dan Xie; Jianlong Xu; Tingting Feng; Yongyuan Zang; Cheng Zhang; Ruixuan Dai; Xiangjian Meng; Zhuoyu Ji

doi:10.1063/1.4930867

Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process

Yilin Sun
, Dan Xie^*
, Jianlong Xu
, Tingting Feng
, Yongyuan Zang
, Cheng Zhang
, Ruixuan Dai
, Xiangjian Meng
, Zhuoyu Ji

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.

Original language	English
Article number	115501
Journal	Journal of Applied Physics
Volume	118
Issue number	11
DOIs	https://doi.org/10.1063/1.4930867
Publication status	Published - 21 Sept 2015
Externally published	Yes

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title = "Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process",

abstract = "We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.",

author = "Yilin Sun and Dan Xie and Jianlong Xu and Tingting Feng and Yongyuan Zang and Cheng Zhang and Ruixuan Dai and Xiangjian Meng and Zhuoyu Ji",

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doi = "10.1063/1.4930867",

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T1 - Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process

AU - Sun, Yilin

AU - Xie, Dan

AU - Xu, Jianlong

AU - Feng, Tingting

AU - Zang, Yongyuan

AU - Zhang, Cheng

AU - Dai, Ruixuan

AU - Meng, Xiangjian

AU - Ji, Zhuoyu

PY - 2015/9/21

Y1 - 2015/9/21

N2 - We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.

AB - We report the fabrication and electrical properties of pentacene-based ferroelectric organic field-effect transistors (FeOFETs) with ultrathin poly(vinylidene fluoride trifluoroethylene) [P(VDF-TrFE)] gate insulators. A ultrathin and uniform P(VDF-TrFE) film was successfully deposited by Langmuir-Blodgett (LB) deposition with well-defined ferroelectric microdomains at the interface between P(VDF-TrFE) films and pentacene active layers. The P(VDF-TrFE) films derived by LB deposition significantly enhance the crystallization of the upper pentacene channel films and thus the performance of our FeOFETs. Our FeOFET device achieves a threshold voltage shift of 8.56 V induced by ferroelectric polarization under different voltage sweeping directions and such enhancement indicates a great potential for future organic nonvolatile memory applications.

UR - https://www.scopus.com/pages/publications/84942455905

U2 - 10.1063/1.4930867

DO - 10.1063/1.4930867

M3 - Article

AN - SCOPUS:84942455905

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 115501

ER -

Pentacene organic ferroelectric transistors with [P(VDF-TrFE)] gate by Langmuir-Blodgett process

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