Pearl-like ZnS-decorated InP nanowire heterostructures and their electric behaviors

One-dimensional semiconductor heterostructures with modulated compositions and interfaces have become of particular interest with respect to potential applications in nanoscale building blocks of future optoelectronic and nanoelectronic devices and systems. In this paper, we reported the synthesis of pearl-like heterostructures, which are composed of ZnS-decorated on InP nanowires via a one-step thermochemical method. Field-effect transistors were fabricated on the basis of a single pearl-like InP/ ZnS heterostructure, which exhibited p-type transistor performance and a decent response to UV light exposure. Electronic transport properties of the devices at different temperatures were finally investigated, revealing a thermal activation behavior.