Patterned Peeling 2D MoS2 off the Substrate

Jing Zhao; Hua Yu; Wei Chen; Rong Yang; Jianqi Zhu; Mengzhou Liao; Dongxia Shi; Guangyu Zhang

doi:10.1021/acsami.6b04896

Patterned Peeling 2D MoS₂ off the Substrate

Jing Zhao
, Hua Yu
, Wei Chen
, Rong Yang
, Jianqi Zhu
, Mengzhou Liao
, Dongxia Shi
, Guangyu Zhang^*

^*Corresponding author for this work

CAS - Institute of Physics
Chinese Academy of Sciences
Gannan Normal University
Collaborative Innovation Center of Quantum Matter
Beijing Key Laboratory for Nanomaterials and Nanodevices

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The performance of two-dimensional (2D) MoS₂ devices depends largely on the quality of the MoS₂ itself. Existing fabrication process for 2D MoS₂ relies on lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering of MoS₂ films on substrates based on a proper interface engineering. The peel-off process utilizes the strong adhesion between gold and MoS₂ and removes the MoS₂ film contact with gold directly, leading to clean MoS₂ pattern generation without residuals. Significantly improved electrical performances including high mobility ∼17.1 ± 8.3 cm²/(V s) and on/off ratio ∼5.6 ± 3.6 × 10⁶ were achieved. Such clean fabrication technique paves a way to high quality MoS₂ devices for various electrical and optical applications.

Original language	English
Pages (from-to)	16546-16550
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	26
DOIs	https://doi.org/10.1021/acsami.6b04896
Publication status	Published - 6 Jul 2016
Externally published	Yes

Keywords

MoS
chemical vapor deposition
field effect transistors
interface engineering
peel-off

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10.1021/acsami.6b04896

Cite this

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title = "Patterned Peeling 2D MoS2 off the Substrate",

abstract = "The performance of two-dimensional (2D) MoS2 devices depends largely on the quality of the MoS2 itself. Existing fabrication process for 2D MoS2 relies on lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering of MoS2 films on substrates based on a proper interface engineering. The peel-off process utilizes the strong adhesion between gold and MoS2 and removes the MoS2 film contact with gold directly, leading to clean MoS2 pattern generation without residuals. Significantly improved electrical performances including high mobility ∼17.1 ± 8.3 cm2/(V s) and on/off ratio ∼5.6 ± 3.6 × 106 were achieved. Such clean fabrication technique paves a way to high quality MoS2 devices for various electrical and optical applications.",

keywords = "MoS, chemical vapor deposition, field effect transistors, interface engineering, peel-off",

author = "Jing Zhao and Hua Yu and Wei Chen and Rong Yang and Jianqi Zhu and Mengzhou Liao and Dongxia Shi and Guangyu Zhang",

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doi = "10.1021/acsami.6b04896",

language = "English",

volume = "8",

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journal = "ACS Applied Materials and Interfaces",

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TY - JOUR

T1 - Patterned Peeling 2D MoS2 off the Substrate

AU - Zhao, Jing

AU - Yu, Hua

AU - Chen, Wei

AU - Yang, Rong

AU - Zhu, Jianqi

AU - Liao, Mengzhou

AU - Shi, Dongxia

AU - Zhang, Guangyu

PY - 2016/7/6

Y1 - 2016/7/6

N2 - The performance of two-dimensional (2D) MoS2 devices depends largely on the quality of the MoS2 itself. Existing fabrication process for 2D MoS2 relies on lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering of MoS2 films on substrates based on a proper interface engineering. The peel-off process utilizes the strong adhesion between gold and MoS2 and removes the MoS2 film contact with gold directly, leading to clean MoS2 pattern generation without residuals. Significantly improved electrical performances including high mobility ∼17.1 ± 8.3 cm2/(V s) and on/off ratio ∼5.6 ± 3.6 × 106 were achieved. Such clean fabrication technique paves a way to high quality MoS2 devices for various electrical and optical applications.

AB - The performance of two-dimensional (2D) MoS2 devices depends largely on the quality of the MoS2 itself. Existing fabrication process for 2D MoS2 relies on lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering of MoS2 films on substrates based on a proper interface engineering. The peel-off process utilizes the strong adhesion between gold and MoS2 and removes the MoS2 film contact with gold directly, leading to clean MoS2 pattern generation without residuals. Significantly improved electrical performances including high mobility ∼17.1 ± 8.3 cm2/(V s) and on/off ratio ∼5.6 ± 3.6 × 106 were achieved. Such clean fabrication technique paves a way to high quality MoS2 devices for various electrical and optical applications.

KW - MoS

KW - chemical vapor deposition

KW - field effect transistors

KW - interface engineering

KW - peel-off

UR - https://www.scopus.com/pages/publications/84977629841

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DO - 10.1021/acsami.6b04896

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EP - 16550

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 26

ER -

Patterned Peeling 2D MoS₂ off the Substrate

Abstract

Keywords

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