Parameter optimization of inductively coupled plasma and its application on multi-wavelength DFB Laser Array

Lan Rao; Xiangjun Xin; Deng'ao Li; Renfan Wang; Hai Hu

doi:10.3788/LOP54.031405

Parameter optimization of inductively coupled plasma and its application on multi-wavelength DFB Laser Array

Lan Rao
, Xiangjun Xin
, Deng'ao Li
, Renfan Wang
, Hai Hu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The influence of the key process parameters of CH₄/H₂/C1₂ inductively coupled plasma (ICP) on the etching performance was systematically investigated. The flow density and the ratio in CH₄/H₂/C1₂ gas mixtures are optimized. Therefore, an effective method can be used for fabricating Bragg grating with high etching rate, low damage ICP etching and high quality surface on special designed InP/InGaAlAs multiple quantum well wafer. Combined with post-process, four wavelengths 1.3 μm distributed feedback laser array was fabricated based on multi-period A/4 shifted Bragg grating. The typical threshold current and the external differential efficiency are about 11 mA and 0.40 W/A, respectively. And the side mode suppression ratio of each laser diode is more than 46 dB. It can be verified that ICP etching processing in Bragg grating has high quality and reliability.

Original language	English
Article number	031405
Journal	Laser and Optoelectronics Progress
Volume	54
Issue number	3
DOIs	https://doi.org/10.3788/LOP54.031405
Publication status	Published - 2017
Externally published	Yes

Keywords

Distributed feedback laser array
InP/InGaAlAs
Inductively coupled plasma
Lasers
On-chip integration

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10.3788/LOP54.031405

Cite this

@article{5f01b6654cff472aa29e9b06e3ca205f,

title = "Parameter optimization of inductively coupled plasma and its application on multi-wavelength DFB Laser Array",

abstract = "The influence of the key process parameters of CH4/H2/C12 inductively coupled plasma (ICP) on the etching performance was systematically investigated. The flow density and the ratio in CH4/H2/C12 gas mixtures are optimized. Therefore, an effective method can be used for fabricating Bragg grating with high etching rate, low damage ICP etching and high quality surface on special designed InP/InGaAlAs multiple quantum well wafer. Combined with post-process, four wavelengths 1.3 μm distributed feedback laser array was fabricated based on multi-period A/4 shifted Bragg grating. The typical threshold current and the external differential efficiency are about 11 mA and 0.40 W/A, respectively. And the side mode suppression ratio of each laser diode is more than 46 dB. It can be verified that ICP etching processing in Bragg grating has high quality and reliability.",

keywords = "Distributed feedback laser array, InP/InGaAlAs, Inductively coupled plasma, Lasers, On-chip integration",

author = "Lan Rao and Xiangjun Xin and Deng'ao Li and Renfan Wang and Hai Hu",

year = "2017",

doi = "10.3788/LOP54.031405",

language = "English",

volume = "54",

journal = "Laser and Optoelectronics Progress",

issn = "1006-4125",

publisher = "Chinese Laser Press",

number = "3",

}

TY - JOUR

T1 - Parameter optimization of inductively coupled plasma and its application on multi-wavelength DFB Laser Array

AU - Rao, Lan

AU - Xin, Xiangjun

AU - Li, Deng'ao

AU - Wang, Renfan

AU - Hu, Hai

PY - 2017

Y1 - 2017

N2 - The influence of the key process parameters of CH4/H2/C12 inductively coupled plasma (ICP) on the etching performance was systematically investigated. The flow density and the ratio in CH4/H2/C12 gas mixtures are optimized. Therefore, an effective method can be used for fabricating Bragg grating with high etching rate, low damage ICP etching and high quality surface on special designed InP/InGaAlAs multiple quantum well wafer. Combined with post-process, four wavelengths 1.3 μm distributed feedback laser array was fabricated based on multi-period A/4 shifted Bragg grating. The typical threshold current and the external differential efficiency are about 11 mA and 0.40 W/A, respectively. And the side mode suppression ratio of each laser diode is more than 46 dB. It can be verified that ICP etching processing in Bragg grating has high quality and reliability.

AB - The influence of the key process parameters of CH4/H2/C12 inductively coupled plasma (ICP) on the etching performance was systematically investigated. The flow density and the ratio in CH4/H2/C12 gas mixtures are optimized. Therefore, an effective method can be used for fabricating Bragg grating with high etching rate, low damage ICP etching and high quality surface on special designed InP/InGaAlAs multiple quantum well wafer. Combined with post-process, four wavelengths 1.3 μm distributed feedback laser array was fabricated based on multi-period A/4 shifted Bragg grating. The typical threshold current and the external differential efficiency are about 11 mA and 0.40 W/A, respectively. And the side mode suppression ratio of each laser diode is more than 46 dB. It can be verified that ICP etching processing in Bragg grating has high quality and reliability.

KW - Distributed feedback laser array

KW - InP/InGaAlAs

KW - Inductively coupled plasma

KW - Lasers

KW - On-chip integration

UR - https://www.scopus.com/pages/publications/85044265487

U2 - 10.3788/LOP54.031405

DO - 10.3788/LOP54.031405

M3 - Article

AN - SCOPUS:85044265487

SN - 1006-4125

VL - 54

JO - Laser and Optoelectronics Progress

JF - Laser and Optoelectronics Progress

IS - 3

M1 - 031405

ER -

Parameter optimization of inductively coupled plasma and its application on multi-wavelength DFB Laser Array

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Keywords

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