p-type field-effect transistors of single-crystal zinc telluride nanobelts

Jun Zhang; Po Chiang Chen; Guozhen Shen; Jibao He; Amar Kumbhar; Chongwu Zhou; Jiye Fang

doi:10.1002/anie.200804073

p-type field-effect transistors of single-crystal zinc telluride nanobelts

Jun Zhang^*
, Po Chiang Chen
, Guozhen Shen
, Jibao He
, Amar Kumbhar
, Chongwu Zhou
, Jiye Fang

^*Corresponding author for this work

State University of New York Binghamton University
University of Southern California
Tulane University
Clemson University
University of North Carolina at Chapel Hill

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

(Graph Presented) Is ZnTe it great: Controlling the crystal-growth direction leads to formation of single-crystal ZnTe nanobelts along the 〈200〉 direction. The nanobelts, which were synthesized in oleylamine at 250°C, have a narrow thickness (<6 nm). The ZnTe nanobelts behave as p-type semiconductors in field-effect transistors (see picture).

Original language	English
Pages (from-to)	9469-9471
Number of pages	3
Journal	Angewandte Chemie - International Edition
Volume	47
Issue number	49
DOIs	https://doi.org/10.1002/anie.200804073
Publication status	Published - 24 Nov 2008
Externally published	Yes

Keywords

Anisotropic growth
Field-effect transistors
Semiconductors
Tellurium
Zinc

Access to Document

10.1002/anie.200804073

Cite this

@article{c06297136769491c8b084e552aba81d4,

title = "p-type field-effect transistors of single-crystal zinc telluride nanobelts",

abstract = "(Graph Presented) Is ZnTe it great: Controlling the crystal-growth direction leads to formation of single-crystal ZnTe nanobelts along the 〈200〉 direction. The nanobelts, which were synthesized in oleylamine at 250°C, have a narrow thickness (<6 nm). The ZnTe nanobelts behave as p-type semiconductors in field-effect transistors (see picture).",

keywords = "Anisotropic growth, Field-effect transistors, Semiconductors, Tellurium, Zinc",

author = "Jun Zhang and Chen, \{Po Chiang\} and Guozhen Shen and Jibao He and Amar Kumbhar and Chongwu Zhou and Jiye Fang",

year = "2008",

month = nov,

day = "24",

doi = "10.1002/anie.200804073",

language = "English",

volume = "47",

pages = "9469--9471",

journal = "Angewandte Chemie - International Edition",

issn = "1433-7851",

publisher = "John Wiley and Sons Ltd",

number = "49",

}

TY - JOUR

T1 - p-type field-effect transistors of single-crystal zinc telluride nanobelts

AU - Zhang, Jun

AU - Chen, Po Chiang

AU - Shen, Guozhen

AU - He, Jibao

AU - Kumbhar, Amar

AU - Zhou, Chongwu

AU - Fang, Jiye

PY - 2008/11/24

Y1 - 2008/11/24

N2 - (Graph Presented) Is ZnTe it great: Controlling the crystal-growth direction leads to formation of single-crystal ZnTe nanobelts along the 〈200〉 direction. The nanobelts, which were synthesized in oleylamine at 250°C, have a narrow thickness (<6 nm). The ZnTe nanobelts behave as p-type semiconductors in field-effect transistors (see picture).

AB - (Graph Presented) Is ZnTe it great: Controlling the crystal-growth direction leads to formation of single-crystal ZnTe nanobelts along the 〈200〉 direction. The nanobelts, which were synthesized in oleylamine at 250°C, have a narrow thickness (<6 nm). The ZnTe nanobelts behave as p-type semiconductors in field-effect transistors (see picture).

KW - Anisotropic growth

KW - Field-effect transistors

KW - Semiconductors

KW - Tellurium

KW - Zinc

UR - https://www.scopus.com/pages/publications/56749134310

U2 - 10.1002/anie.200804073

DO - 10.1002/anie.200804073

M3 - Article

AN - SCOPUS:56749134310

SN - 1433-7851

VL - 47

SP - 9469

EP - 9471

JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

IS - 49

ER -

p-type field-effect transistors of single-crystal zinc telluride nanobelts

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this