TY - JOUR
T1 - Organic-2D composite material-based RRAM with high reliability for mimicking synaptic behavior
AU - Sun, Tangyou
AU - Yu, Fantao
AU - Tang, Xiaosheng
AU - Li, Haiou
AU - Zhang, Fabi
AU - Xu, Zhimou
AU - Liao, Qing
AU - Yu, Zhiqiang
AU - Liu, Xingpeng
AU - Wangyang, Peihua
AU - Li, Hezhang
AU - Peng, Ying
N1 - Publisher Copyright:
© 2023 The Authors
PY - 2024/3
Y1 - 2024/3
N2 - The field of artificial intelligence and neural computing has been rapidly expanding due to the implementation of resistive random-access memory (RRAM) based artificial synaptic. However, the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately. To overcome such limitation, organic-2D composites with high mechanical properties are proposed as the active layer of RRAM. Moreover, we enhance the reliability of the device by ZrO2 insertion layer, resulting in stable synaptic performance. The Ag/PVA:h-BN/ZrO2/ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5 × 102, a ∼2 400 cycles endurance and a long retention time (>6 × 103s), which are essential for the development of high-performance RRAMs. We also study the possible synaptic mechanism and dynamic plasticity of the memory device, observing the transition from short-term potentiation (STP) to long-term potentiation (LTP) under the effect of continuous voltage pulses. Moreover, the device exhibits both long-term depression (LTD) and paired-pulse facilitation (PPF) properties, which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses, representing promising avenues for the development of advanced neuromorphic computing systems.
AB - The field of artificial intelligence and neural computing has been rapidly expanding due to the implementation of resistive random-access memory (RRAM) based artificial synaptic. However, the low flexibility of conventional RRAM materials hinders their ability to mimic synaptic behavior accurately. To overcome such limitation, organic-2D composites with high mechanical properties are proposed as the active layer of RRAM. Moreover, we enhance the reliability of the device by ZrO2 insertion layer, resulting in stable synaptic performance. The Ag/PVA:h-BN/ZrO2/ITO devices show stable bipolar resistive switching behavior with an ON/OFF ratio of over 5 × 102, a ∼2 400 cycles endurance and a long retention time (>6 × 103s), which are essential for the development of high-performance RRAMs. We also study the possible synaptic mechanism and dynamic plasticity of the memory device, observing the transition from short-term potentiation (STP) to long-term potentiation (LTP) under the effect of continuous voltage pulses. Moreover, the device exhibits both long-term depression (LTD) and paired-pulse facilitation (PPF) properties, which have significant implications for the design of organic-2D composite material RRAMs that aim to mimic biological synapses, representing promising avenues for the development of advanced neuromorphic computing systems.
KW - Neuromorphic computing
KW - Organic-2D composite material
KW - Resistive random-access memory
KW - Synaptic mimicking
UR - https://www.scopus.com/pages/publications/85169920736
U2 - 10.1016/j.jmat.2023.07.005
DO - 10.1016/j.jmat.2023.07.005
M3 - Article
AN - SCOPUS:85169920736
SN - 2352-8478
VL - 10
SP - 440
EP - 447
JO - Journal of Materiomics
JF - Journal of Materiomics
IS - 2
ER -