Optical and electrical properties of thermochromic VO2 thin films on Pt layers

H. J. Zhou; J. H. Li; X. Cao; S. H. Bao; P. Jin

doi:10.1179/1432891715Z.0000000001562

Optical and electrical properties of thermochromic VO₂ thin films on Pt layers

H. J. Zhou, J. H. Li, X. Cao, S. H. Bao, P. Jin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

VO₂ thin films have been successfully deposited on Pt(111)/Ti/SiO₂/Si substrate by means of reactive magnetron sputtering technique. The IR reflectance of the as-prepared films exhibited a big contrast (,50%) between the room temperature (258C) and high temperature (1008C) owing to the fancy semiconductor-metal transition of VO₂ thin film. Nevertheless, the initial resistance was very low and the transition cannot be triggered by the electrical field. Authors believe that the rather poor electrical switching behaviour was connected to the leakage current from the large grain boundaries and pores in the surface of the VO₂ thin film. This study may provide insights for VO₂ films grown on Pt(111)/Ti/SiO₂/Si substrates and suggest that Pt layers can serve as a suitable substrate of VO₂ films for optical switching devices but not for electrical switching ones.

Original language	English
Pages (from-to)	S246-S250
Journal	Materials Research Innovations
Volume	19
DOIs	https://doi.org/10.1179/1432891715Z.0000000001562
Publication status	Published - 1 May 2015
Externally published	Yes

Keywords

Platinum
Semiconductor-metal transition
Thermochromic
Vanadium dioxide

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10.1179/1432891715Z.0000000001562

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@article{3c380a8c8e8d4d66ada8507f4880bcc0,

title = "Optical and electrical properties of thermochromic VO2 thin films on Pt layers",

abstract = "VO2 thin films have been successfully deposited on Pt(111)/Ti/SiO2/Si substrate by means of reactive magnetron sputtering technique. The IR reflectance of the as-prepared films exhibited a big contrast (,50\%) between the room temperature (258C) and high temperature (1008C) owing to the fancy semiconductor-metal transition of VO2 thin film. Nevertheless, the initial resistance was very low and the transition cannot be triggered by the electrical field. Authors believe that the rather poor electrical switching behaviour was connected to the leakage current from the large grain boundaries and pores in the surface of the VO2 thin film. This study may provide insights for VO2 films grown on Pt(111)/Ti/SiO2/Si substrates and suggest that Pt layers can serve as a suitable substrate of VO2 films for optical switching devices but not for electrical switching ones.",

keywords = "Platinum, Semiconductor-metal transition, Thermochromic, Vanadium dioxide",

author = "Zhou, \{H. J.\} and Li, \{J. H.\} and X. Cao and Bao, \{S. H.\} and P. Jin",

note = "Publisher Copyright: {\textcopyright} W. S. Maney \& Son Ltd 2015.",

year = "2015",

month = may,

day = "1",

doi = "10.1179/1432891715Z.0000000001562",

language = "English",

volume = "19",

pages = "S246--S250",

journal = "Materials Research Innovations",

issn = "1432-8917",

publisher = "Maney Publishing",

}

TY - JOUR

T1 - Optical and electrical properties of thermochromic VO2 thin films on Pt layers

AU - Zhou, H. J.

AU - Li, J. H.

AU - Cao, X.

AU - Bao, S. H.

AU - Jin, P.

N1 - Publisher Copyright: © W. S. Maney & Son Ltd 2015.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - VO2 thin films have been successfully deposited on Pt(111)/Ti/SiO2/Si substrate by means of reactive magnetron sputtering technique. The IR reflectance of the as-prepared films exhibited a big contrast (,50%) between the room temperature (258C) and high temperature (1008C) owing to the fancy semiconductor-metal transition of VO2 thin film. Nevertheless, the initial resistance was very low and the transition cannot be triggered by the electrical field. Authors believe that the rather poor electrical switching behaviour was connected to the leakage current from the large grain boundaries and pores in the surface of the VO2 thin film. This study may provide insights for VO2 films grown on Pt(111)/Ti/SiO2/Si substrates and suggest that Pt layers can serve as a suitable substrate of VO2 films for optical switching devices but not for electrical switching ones.

AB - VO2 thin films have been successfully deposited on Pt(111)/Ti/SiO2/Si substrate by means of reactive magnetron sputtering technique. The IR reflectance of the as-prepared films exhibited a big contrast (,50%) between the room temperature (258C) and high temperature (1008C) owing to the fancy semiconductor-metal transition of VO2 thin film. Nevertheless, the initial resistance was very low and the transition cannot be triggered by the electrical field. Authors believe that the rather poor electrical switching behaviour was connected to the leakage current from the large grain boundaries and pores in the surface of the VO2 thin film. This study may provide insights for VO2 films grown on Pt(111)/Ti/SiO2/Si substrates and suggest that Pt layers can serve as a suitable substrate of VO2 films for optical switching devices but not for electrical switching ones.

KW - Platinum

KW - Semiconductor-metal transition

KW - Thermochromic

KW - Vanadium dioxide

UR - https://www.scopus.com/pages/publications/84941265608

U2 - 10.1179/1432891715Z.0000000001562

DO - 10.1179/1432891715Z.0000000001562

M3 - Article

AN - SCOPUS:84941265608

SN - 1432-8917

VL - 19

SP - S246-S250

JO - Materials Research Innovations

JF - Materials Research Innovations

ER -

Optical and electrical properties of thermochromic VO₂ thin films on Pt layers

Abstract

Keywords

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