Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

Jia Tao Zhang; Chuan Bao Cao; Qiang Lv; Chao Li; He Sun Zhu

doi:10.1023/A:1024492513927

Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

Jia Tao Zhang, Chuan Bao Cao^*, Qiang Lv, Chao Li, He Sun Zhu

^*Corresponding author for this work

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Carbon nitride (CM_x) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C₄H₄N₄) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CN_x films. The band gaps (E_opt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and E_opt. The electrical resistivities of the films on Si wafers are in the 10⁹-10¹⁰ Ω cm range.

Original language	English
Pages (from-to)	2559-2562
Number of pages	4
Journal	Journal of Materials Science
Volume	38
Issue number	12
DOIs	https://doi.org/10.1023/A:1024492513927
Publication status	Published - 15 Jul 2003
Externally published	Yes

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title = "Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition",

abstract = "Carbon nitride (CMx) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C4H4N4) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CNx films. The band gaps (Eopt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and Eopt. The electrical resistivities of the films on Si wafers are in the 109-1010 Ω cm range.",

author = "Zhang, \{Jia Tao\} and Cao, \{Chuan Bao\} and Qiang Lv and Chao Li and Zhu, \{He Sun\}",

year = "2003",

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doi = "10.1023/A:1024492513927",

language = "English",

volume = "38",

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journal = "Journal of Materials Science",

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TY - JOUR

T1 - Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

AU - Zhang, Jia Tao

AU - Cao, Chuan Bao

AU - Lv, Qiang

AU - Li, Chao

AU - Zhu, He Sun

PY - 2003/7/15

Y1 - 2003/7/15

N2 - Carbon nitride (CMx) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C4H4N4) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CNx films. The band gaps (Eopt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and Eopt. The electrical resistivities of the films on Si wafers are in the 109-1010 Ω cm range.

AB - Carbon nitride (CMx) films were prepared on silicon (100) wafers and ITO conductive glasses by cathode electrodeposition, using dicyandiamide (C4H4N4) in acetone as precursors. The composition ratios (N/C) were approximated to or larger than 1 from XPS. The optical properties and electrical resistivities of the films were investigated. Intense PL with two bands in the range 2.5-3.5 eV was observed on the CNx films. The band gaps (Eopt) deduced from measurements of the optical absorption coefficients in the UV-VIS spectra were found to be in the range of 1.1-1.6 eV. From the PL and UV-VIS spectra, the nitrogen content has a large effect on the PL band gap and Eopt. The electrical resistivities of the films on Si wafers are in the 109-1010 Ω cm range.

UR - https://www.scopus.com/pages/publications/0042807622

U2 - 10.1023/A:1024492513927

DO - 10.1023/A:1024492513927

M3 - Article

AN - SCOPUS:0042807622

SN - 0022-2461

VL - 38

SP - 2559

EP - 2562

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 12

ER -

Optical and electrical properties of carbon nitride films deposited by cathode electrodeposition

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