Optical and electrical characterization of ZnO/CuO heterojunction solar cells

Sajad Hussain; Chuanbao Cao; Ghulam Nabi; Waheed S. Khan; Muhammad Tahir; Muhammad Tanveer; Imran Aslam

doi:10.1016/j.ijleo.2016.10.099

Optical and electrical characterization of ZnO/CuO heterojunction solar cells

Sajad Hussain^*, Chuanbao Cao, Ghulam Nabi, Waheed S. Khan, Muhammad Tahir, Muhammad Tanveer, Imran Aslam

^*Corresponding author for this work

School of Material Science and Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

This paper reports the fabrication and characterization of nontoxic heterojunction of ZnO/CuO. The films were characterized through X-ray diffraction, UV spectroscopy and field emission scanning electron microscope (FESEM). The valence and conduction band edges were measured through Photo-Electron spectroscopy in air. The electrical parameter for FTO/ZnO/CuO/In heterojunction diode such as ideality factor, barrier height, and series resistance were calculated by using conventional forward bias I–V characteristics and also verified with the help of Cheung method. The high value of ideality factor was attributed to high series resistance, defects, other phases of CuO and recombination at interface and within bulk. The double logarithmic graph of current and voltage showed that the transport mechanism is due to the space charge limited current and trapped charge limited current. Photovoltaic parameters Voc of ∼190 mV and Jsc of ∼0.40 mA/cm² of FTO/ZnO/CuO/In heterojunction were recorded.

Original language	English
Pages (from-to)	372-377
Number of pages	6
Journal	Optik
Volume	130
DOIs	https://doi.org/10.1016/j.ijleo.2016.10.099
Publication status	Published - 1 Feb 2017

Keywords

Electrical properties
Heterojunction
Optical properties
Seminconductor
Sol-gel

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.ijleo.2016.10.099

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title = "Optical and electrical characterization of ZnO/CuO heterojunction solar cells",

abstract = "This paper reports the fabrication and characterization of nontoxic heterojunction of ZnO/CuO. The films were characterized through X-ray diffraction, UV spectroscopy and field emission scanning electron microscope (FESEM). The valence and conduction band edges were measured through Photo-Electron spectroscopy in air. The electrical parameter for FTO/ZnO/CuO/In heterojunction diode such as ideality factor, barrier height, and series resistance were calculated by using conventional forward bias I–V characteristics and also verified with the help of Cheung method. The high value of ideality factor was attributed to high series resistance, defects, other phases of CuO and recombination at interface and within bulk. The double logarithmic graph of current and voltage showed that the transport mechanism is due to the space charge limited current and trapped charge limited current. Photovoltaic parameters Voc of ∼190 mV and Jsc of ∼0.40 mA/cm2 of FTO/ZnO/CuO/In heterojunction were recorded.",

keywords = "Electrical properties, Heterojunction, Optical properties, Seminconductor, Sol-gel",

author = "Sajad Hussain and Chuanbao Cao and Ghulam Nabi and Khan, {Waheed S.} and Muhammad Tahir and Muhammad Tanveer and Imran Aslam",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier GmbH",

year = "2017",

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doi = "10.1016/j.ijleo.2016.10.099",

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T1 - Optical and electrical characterization of ZnO/CuO heterojunction solar cells

AU - Hussain, Sajad

AU - Cao, Chuanbao

AU - Nabi, Ghulam

AU - Khan, Waheed S.

AU - Tahir, Muhammad

AU - Tanveer, Muhammad

AU - Aslam, Imran

PY - 2017/2/1

Y1 - 2017/2/1

N2 - This paper reports the fabrication and characterization of nontoxic heterojunction of ZnO/CuO. The films were characterized through X-ray diffraction, UV spectroscopy and field emission scanning electron microscope (FESEM). The valence and conduction band edges were measured through Photo-Electron spectroscopy in air. The electrical parameter for FTO/ZnO/CuO/In heterojunction diode such as ideality factor, barrier height, and series resistance were calculated by using conventional forward bias I–V characteristics and also verified with the help of Cheung method. The high value of ideality factor was attributed to high series resistance, defects, other phases of CuO and recombination at interface and within bulk. The double logarithmic graph of current and voltage showed that the transport mechanism is due to the space charge limited current and trapped charge limited current. Photovoltaic parameters Voc of ∼190 mV and Jsc of ∼0.40 mA/cm2 of FTO/ZnO/CuO/In heterojunction were recorded.

AB - This paper reports the fabrication and characterization of nontoxic heterojunction of ZnO/CuO. The films were characterized through X-ray diffraction, UV spectroscopy and field emission scanning electron microscope (FESEM). The valence and conduction band edges were measured through Photo-Electron spectroscopy in air. The electrical parameter for FTO/ZnO/CuO/In heterojunction diode such as ideality factor, barrier height, and series resistance were calculated by using conventional forward bias I–V characteristics and also verified with the help of Cheung method. The high value of ideality factor was attributed to high series resistance, defects, other phases of CuO and recombination at interface and within bulk. The double logarithmic graph of current and voltage showed that the transport mechanism is due to the space charge limited current and trapped charge limited current. Photovoltaic parameters Voc of ∼190 mV and Jsc of ∼0.40 mA/cm2 of FTO/ZnO/CuO/In heterojunction were recorded.

KW - Electrical properties

KW - Heterojunction

KW - Optical properties

KW - Seminconductor

KW - Sol-gel

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DO - 10.1016/j.ijleo.2016.10.099

M3 - Article

AN - SCOPUS:85027950309

SN - 0030-4026

VL - 130

SP - 372

EP - 377

JO - Optik

JF - Optik

ER -

Optical and electrical characterization of ZnO/CuO heterojunction solar cells

Abstract

Keywords

UN SDGs

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