On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment

L. Zhang; C. L. Heng; C. N. Zhao; W. Y. Su; Y. K. Gao; P. G. Yin; T. G. Finstad

doi:10.1016/j.rinp.2021.105121

On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment

L. Zhang, C. L. Heng^*, C. N. Zhao, W. Y. Su, Y. K. Gao, P. G. Yin, T. G. Finstad

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with the structure of the films. Photoluminescence (PL) spectra show that the UV intensity increases much by heat treatment and after 1000 °C annealing the doped films have stronger UV emission than that of an un-doped film. The enhanced UV emission is related to crystallinity improvements of the films. After heat treatment at 1000 °C Zn (Tb) silicates had formed. The film prepared with a Tb concentration of 0.029 at.% showed the best crystallinity and highest UV intensity. Finally, it was shown that the UV PL intensity can be increased further with TiN nanoparticle capping on the surface of the films.

Original language	English
Article number	105121
Journal	Results in Physics
Volume	32
DOIs	https://doi.org/10.1016/j.rinp.2021.105121
Publication status	Published - Jan 2022

Keywords

Tb doping
Thin films
TiN nanoparticles
UV emission
ZnO

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10.1016/j.rinp.2021.105121

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@article{070c4692dc584fbe95aa2d192713354f,

title = "On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment",

abstract = "Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with the structure of the films. Photoluminescence (PL) spectra show that the UV intensity increases much by heat treatment and after 1000 °C annealing the doped films have stronger UV emission than that of an un-doped film. The enhanced UV emission is related to crystallinity improvements of the films. After heat treatment at 1000 °C Zn (Tb) silicates had formed. The film prepared with a Tb concentration of 0.029 at.% showed the best crystallinity and highest UV intensity. Finally, it was shown that the UV PL intensity can be increased further with TiN nanoparticle capping on the surface of the films.",

keywords = "Tb doping, Thin films, TiN nanoparticles, UV emission, ZnO",

author = "L. Zhang and Heng, {C. L.} and Zhao, {C. N.} and Su, {W. Y.} and Gao, {Y. K.} and Yin, {P. G.} and Finstad, {T. G.}",

note = "Publisher Copyright: {\textcopyright} 2021 The Author(s)",

year = "2022",

month = jan,

doi = "10.1016/j.rinp.2021.105121",

language = "English",

volume = "32",

journal = "Results in Physics",

issn = "2211-3797",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment

AU - Zhang, L.

AU - Heng, C. L.

AU - Zhao, C. N.

AU - Su, W. Y.

AU - Gao, Y. K.

AU - Yin, P. G.

AU - Finstad, T. G.

PY - 2022/1

Y1 - 2022/1

N2 - Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with the structure of the films. Photoluminescence (PL) spectra show that the UV intensity increases much by heat treatment and after 1000 °C annealing the doped films have stronger UV emission than that of an un-doped film. The enhanced UV emission is related to crystallinity improvements of the films. After heat treatment at 1000 °C Zn (Tb) silicates had formed. The film prepared with a Tb concentration of 0.029 at.% showed the best crystallinity and highest UV intensity. Finally, it was shown that the UV PL intensity can be increased further with TiN nanoparticle capping on the surface of the films.

AB - Terbium (Tb) doped zinc oxide (ZnO) thin films were deposited on Si substrates by magnetron sputtering in an oxygen containing plasma. The Tb doping concentration was varied from 0 to 0.38 at.%. The effect of heat treatment at high temperature on the ultraviolet (UV) emission was studied along with the structure of the films. Photoluminescence (PL) spectra show that the UV intensity increases much by heat treatment and after 1000 °C annealing the doped films have stronger UV emission than that of an un-doped film. The enhanced UV emission is related to crystallinity improvements of the films. After heat treatment at 1000 °C Zn (Tb) silicates had formed. The film prepared with a Tb concentration of 0.029 at.% showed the best crystallinity and highest UV intensity. Finally, it was shown that the UV PL intensity can be increased further with TiN nanoparticle capping on the surface of the films.

KW - Tb doping

KW - Thin films

KW - TiN nanoparticles

KW - UV emission

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=85121150597&partnerID=8YFLogxK

U2 - 10.1016/j.rinp.2021.105121

DO - 10.1016/j.rinp.2021.105121

M3 - Article

AN - SCOPUS:85121150597

SN - 2211-3797

VL - 32

JO - Results in Physics

JF - Results in Physics

M1 - 105121

ER -

On the structure and ultraviolet emission of terbium doped zinc oxide thin films on silicon after high temperature treatment

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Keywords

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