Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2

Shuigang Xu; Junying Shen; Gen Long; Zefei Wu; Zhi Qiang Bao; Cheng Cheng Liu; Xiao Xiao; Tianyi Han; Jiangxiazi Lin; Yingying Wu; Huanhuan Lu; Jianqiang Hou; Liheng An; Yuanwei Wang; Yuan Cai; K. M. Ho; Yuheng He; Rolf Lortz; Fan Zhang; Ning Wang

doi:10.1103/PhysRevLett.118.067702

Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2

Shuigang Xu, Junying Shen, Gen Long, Zefei Wu, Zhi Qiang Bao, Cheng Cheng Liu, Xiao Xiao, Tianyi Han, Jiangxiazi Lin, Yingying Wu, Huanhuan Lu, Jianqiang Hou, Liheng An, Yuanwei Wang, Yuan Cai, K. M. Ho, Yuheng He, Rolf Lortz, Fan Zhang^*, Ning Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.

Original language	English
Article number	067702
Journal	Physical Review Letters
Volume	118
Issue number	6
DOIs	https://doi.org/10.1103/PhysRevLett.118.067702
Publication status	Published - 10 Feb 2017
Externally published	Yes

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Xu, S., Shen, J., Long, G., Wu, Z., Bao, Z. Q., Liu, C. C., Xiao, X., Han, T., Lin, J., Wu, Y., Lu, H., Hou, J., An, L., Wang, Y., Cai, Y., Ho, K. M., He, Y., Lortz, R., Zhang, F., & Wang, N. (2017). Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2. Physical Review Letters, 118(6), Article 067702. https://doi.org/10.1103/PhysRevLett.118.067702

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title = "Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2",

abstract = "We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.",

author = "Shuigang Xu and Junying Shen and Gen Long and Zefei Wu and Bao, {Zhi Qiang} and Liu, {Cheng Cheng} and Xiao Xiao and Tianyi Han and Jiangxiazi Lin and Yingying Wu and Huanhuan Lu and Jianqiang Hou and Liheng An and Yuanwei Wang and Yuan Cai and Ho, {K. M.} and Yuheng He and Rolf Lortz and Fan Zhang and Ning Wang",

note = "Publisher Copyright: {\textcopyright} 2017 American Physical Society.",

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doi = "10.1103/PhysRevLett.118.067702",

language = "English",

volume = "118",

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T1 - Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2

AU - Xu, Shuigang

AU - Shen, Junying

AU - Long, Gen

AU - Wu, Zefei

AU - Bao, Zhi Qiang

AU - Liu, Cheng Cheng

AU - Xiao, Xiao

AU - Han, Tianyi

AU - Lin, Jiangxiazi

AU - Wu, Yingying

AU - Lu, Huanhuan

AU - Hou, Jianqiang

AU - An, Liheng

AU - Wang, Yuanwei

AU - Cai, Yuan

AU - Ho, K. M.

AU - He, Yuheng

AU - Lortz, Rolf

AU - Zhang, Fan

AU - Wang, Ning

PY - 2017/2/10

Y1 - 2017/2/10

N2 - We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.

AB - We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field. By tilting the magnetic field, we discover Landau level crossing effects at ultralow coincident angles, revealing that the Zeeman energy is about 3 times as large as the cyclotron energy near the valence band top at the Γ valley. This result implies the significant roles played by the exchange interactions in p-type few-layer WSe2, in which itinerant or QH ferromagnetism likely occurs. Evidently, the Γ valley of few-layer WSe2 offers a unique platform with unusually heavy hole carriers and a substantially enhanced g factor for exploring strongly correlated phenomena.

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JO - Physical Review Letters

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Odd-Integer Quantum Hall States and Giant Spin Susceptibility in p -Type Few-Layer WSe2

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