Abstract
A diode-pumped passively mode-locked Nd-doped La3Ga5SiO14 (Nd:LGS) laser is realized by using a semiconductor saturable absorber mirror. With the pump power of 2 W, we obtain a 532 nm self-frequency doubling (SFD) laser together with a 10.9 ps fundamental laser at the repetition rate of 173.7 MHz. To the best of our knowledge, it is the first time for self-frequency doubling in the diode-pumped mode-locked Nd:LGS laser. Benefited from the diode lasers and its self-frequency doubling property, Nd:LGS could be a potential candidate for compact, stable and cheap ultrafast green laser sources.
Original language | English |
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Article number | 014206 |
Journal | Chinese Physics Letters |
Volume | 32 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2015 |