Observation of enhanced carrier transport properties of Si 100-oriented whiskers under uniaxial strains

Kun Zheng; Ruiwen Shao; Qingsong Deng; Yuefei Zhang; Yujie Li; Xiaodong Han; Ze Zhang; Jin Zou

doi:10.1063/1.4861425

Observation of enhanced carrier transport properties of Si 100-oriented whiskers under uniaxial strains

Kun Zheng^*, Ruiwen Shao, Qingsong Deng, Yuefei Zhang, Yujie Li, Xiaodong Han, Ze Zhang, Jin Zou

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this study, enhancements of the carrier transport properties of p-type 100-oriented Si whiskers are observed under uniaxial tensile and compressive strains. It has been found that over 400 enhancement of electrical conductivity is achieved under a 2 tensile strain, while a 2 compressive strain can only cause ∼80 conductivity enhancement. The enhancements are mainly attributed to the breaking of the degeneracy of the v2 and v1 valence bands induced a reduction of the hole effective mass. This study provides an important insight of how the carrier mobility variation caused by the strain impact on their transport properties.

Original language	English
Article number	013111
Journal	Applied Physics Letters
Volume	104
Issue number	1
DOIs	https://doi.org/10.1063/1.4861425
Publication status	Published - 6 Jan 2014
Externally published	Yes

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AU - Zheng, Kun

AU - Shao, Ruiwen

AU - Deng, Qingsong

AU - Zhang, Yuefei

AU - Li, Yujie

AU - Han, Xiaodong

AU - Zhang, Ze

AU - Zou, Jin

PY - 2014/1/6

Y1 - 2014/1/6

N2 - In this study, enhancements of the carrier transport properties of p-type 100-oriented Si whiskers are observed under uniaxial tensile and compressive strains. It has been found that over 400 enhancement of electrical conductivity is achieved under a 2 tensile strain, while a 2 compressive strain can only cause ∼80 conductivity enhancement. The enhancements are mainly attributed to the breaking of the degeneracy of the v2 and v1 valence bands induced a reduction of the hole effective mass. This study provides an important insight of how the carrier mobility variation caused by the strain impact on their transport properties.

AB - In this study, enhancements of the carrier transport properties of p-type 100-oriented Si whiskers are observed under uniaxial tensile and compressive strains. It has been found that over 400 enhancement of electrical conductivity is achieved under a 2 tensile strain, while a 2 compressive strain can only cause ∼80 conductivity enhancement. The enhancements are mainly attributed to the breaking of the degeneracy of the v2 and v1 valence bands induced a reduction of the hole effective mass. This study provides an important insight of how the carrier mobility variation caused by the strain impact on their transport properties.

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VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

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Observation of enhanced carrier transport properties of Si 100-oriented whiskers under uniaxial strains

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