Numerical simulation of semiconductor opening switch

Feng He; Jian Cang Su; Yong Dong Li; Chun Liang Liu; Jian Sun

Numerical simulation of semiconductor opening switch

Feng He^*
, Jian Cang Su
, Yong Dong Li
, Chun Liang Liu
, Jian Sun

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A current-controlled model of semiconductor opening switch (SOS) was developed to study the current opening effect and the physical process of SOS in pulsed power system. The p⁺-p-n-n⁺ type SOS was analyzed on the basis of the model. The distributions of carriers and field in SOS were simulated during forward and reverse current pumping, and the current opening effect was obtained. The results show that the opening process starts first at the p-type region.

Original language	English
Pages (from-to)	1893-1896
Number of pages	4
Journal	Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams
Volume	17
Issue number	12
Publication status	Published - Dec 2005
Externally published	Yes

Keywords

Current opening effect
Numerical simulation
Pulsed power
Semiconductor opening switch

Cite this

@article{cd956c9898344b8888764d87358fc087,

title = "Numerical simulation of semiconductor opening switch",

abstract = "A current-controlled model of semiconductor opening switch (SOS) was developed to study the current opening effect and the physical process of SOS in pulsed power system. The p+-p-n-n+ type SOS was analyzed on the basis of the model. The distributions of carriers and field in SOS were simulated during forward and reverse current pumping, and the current opening effect was obtained. The results show that the opening process starts first at the p-type region.",

keywords = "Current opening effect, Numerical simulation, Pulsed power, Semiconductor opening switch",

author = "Feng He and Su, \{Jian Cang\} and Li, \{Yong Dong\} and Liu, \{Chun Liang\} and Jian Sun",

year = "2005",

month = dec,

language = "English",

volume = "17",

pages = "1893--1896",

journal = "Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams",

issn = "1001-4322",

publisher = "Editorial Office of High Power Laser and Particle Beams",

number = "12",

}

TY - JOUR

T1 - Numerical simulation of semiconductor opening switch

AU - He, Feng

AU - Su, Jian Cang

AU - Li, Yong Dong

AU - Liu, Chun Liang

AU - Sun, Jian

PY - 2005/12

Y1 - 2005/12

N2 - A current-controlled model of semiconductor opening switch (SOS) was developed to study the current opening effect and the physical process of SOS in pulsed power system. The p+-p-n-n+ type SOS was analyzed on the basis of the model. The distributions of carriers and field in SOS were simulated during forward and reverse current pumping, and the current opening effect was obtained. The results show that the opening process starts first at the p-type region.

AB - A current-controlled model of semiconductor opening switch (SOS) was developed to study the current opening effect and the physical process of SOS in pulsed power system. The p+-p-n-n+ type SOS was analyzed on the basis of the model. The distributions of carriers and field in SOS were simulated during forward and reverse current pumping, and the current opening effect was obtained. The results show that the opening process starts first at the p-type region.

KW - Current opening effect

KW - Numerical simulation

KW - Pulsed power

KW - Semiconductor opening switch

UR - https://www.scopus.com/pages/publications/33644649072

M3 - Article

AN - SCOPUS:33644649072

SN - 1001-4322

VL - 17

SP - 1893

EP - 1896

JO - Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams

JF - Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams

IS - 12

ER -

Numerical simulation of semiconductor opening switch

Abstract

Keywords

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