@inproceedings{991aa2e7d8794559b9374cc1634f689e,
title = "Numerical modelling of high efficiency InAs/GaAs intermediate band solar cell",
abstract = "Quantum Dots (QDs) intermediate band solar cells (IBSC) are the most attractive candidates for the next generation of photovoltaic applications. In this paper, theoretical model of InAs/GaAs device has been proposed, where we have calculated the effect of variation in the thickness of intrinsic and IB layer on the efficiency of the solar cell using detailed balance theory. IB energies has been optimized for different IB layers thickness. Maximum efficiency 46.6\% is calculated for IB material under maximum optical concentration.",
keywords = "intermediate band (IB), quantum dot (QD), solar cell",
author = "Ali Imran and Jianliang Jiang and Debora Eric and Muhammad Yousaf",
note = "Publisher Copyright: {\textcopyright} 2018 SPIE.; 2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics: Materials and Devices, OIT 2017 ; Conference date: 28-10-2017 Through 30-10-2017",
year = "2018",
doi = "10.1117/12.2288107",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Xingjun Wang and Baojun Li and Yi, \{Ya Sha\}",
booktitle = "2017 International Conference on Optical Instruments and Technology - Micro/Nano Photonics",
address = "United States",
}
