@inproceedings{e3fc79fada2d473096b65826aece00f8,
title = "Novel graphene-based resistive random access memory",
abstract = "This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced. This work may inspire new design of high-performance RRAM based on two-dimensional material and its application in electronic systems.",
author = "Li, \{Yu Tao\} and Zhao, \{Hai Ming\} and He Tian and Wang, \{Xue Feng\} and Mi, \{Wen Tian\} and Yi Yang and Ren, \{Tian Ling\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 ; Conference date: 25-10-2016 Through 28-10-2016",
year = "2016",
doi = "10.1109/ICSICT.2016.7998952",
language = "English",
series = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "462--465",
editor = "Yu-Long Jiang and Ting-Ao Tang and Ru Huang",
booktitle = "2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings",
address = "United States",
}