Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

Yu Tao Li; Hai Ming Zhao; He Tian; Peng Zhi Shao; Xin Xin; Hui Wen Cao; Ning Qin Deng; Yi Yang; Tian Ling Ren

doi:10.1557/adv.2017.417

Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

Yu Tao Li
, Hai Ming Zhao
, He Tian
, Peng Zhi Shao
, Xin Xin
, Hui Wen Cao
, Ning Qin Deng
, Yi Yang
, Tian Ling Ren^*

^*Corresponding author for this work

Tsinghua University
Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, field effect transistors (FET) based on different kinds of non-graphene materials are introduced, which are MoS2, WSe2 and black phosphorus (BP). Those devices have their unique features in fabrication process compared with conventional FETs. Among them, MoS2 FET shows better electrical characteristics by applying a SiO2 protective layer; WSe2 FET is fabricated based on a new low pressure chemical vapor deposition (LPCVD) method; BP FET acquires high on/off ratio and high hole mobility by using a simple dry transfer method. Those novel non-graphene materials inspire new design and fabrication process of basic logic device.

Original language	English
Pages (from-to)	3675-3684
Number of pages	10
Journal	MRS Advances
Volume	2
Issue number	60
DOIs	https://doi.org/10.1557/adv.2017.417
Publication status	Published - 2017
Externally published	Yes

Keywords

chemical vapor deposition (CVD) (deposition)
electronic structure
Raman spectroscopy

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10.1557/adv.2017.417

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title = "Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials",

abstract = "In this paper, field effect transistors (FET) based on different kinds of non-graphene materials are introduced, which are MoS2, WSe2 and black phosphorus (BP). Those devices have their unique features in fabrication process compared with conventional FETs. Among them, MoS2 FET shows better electrical characteristics by applying a SiO2 protective layer; WSe2 FET is fabricated based on a new low pressure chemical vapor deposition (LPCVD) method; BP FET acquires high on/off ratio and high hole mobility by using a simple dry transfer method. Those novel non-graphene materials inspire new design and fabrication process of basic logic device.",

keywords = "chemical vapor deposition (CVD) (deposition), electronic structure, Raman spectroscopy",

author = "Li, \{Yu Tao\} and Zhao, \{Hai Ming\} and He Tian and Shao, \{Peng Zhi\} and Xin Xin and Cao, \{Hui Wen\} and Deng, \{Ning Qin\} and Yi Yang and Ren, \{Tian Ling\}",

note = "Publisher Copyright: Copyright {\textcopyright} Materials Research Society 2017.",

year = "2017",

doi = "10.1557/adv.2017.417",

language = "English",

volume = "2",

pages = "3675--3684",

journal = "MRS Advances",

issn = "2059-8521",

publisher = "Springer Nature",

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TY - JOUR

T1 - Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

AU - Li, Yu Tao

AU - Zhao, Hai Ming

AU - Tian, He

AU - Shao, Peng Zhi

AU - Xin, Xin

AU - Cao, Hui Wen

AU - Deng, Ning Qin

AU - Yang, Yi

AU - Ren, Tian Ling

PY - 2017

Y1 - 2017

N2 - In this paper, field effect transistors (FET) based on different kinds of non-graphene materials are introduced, which are MoS2, WSe2 and black phosphorus (BP). Those devices have their unique features in fabrication process compared with conventional FETs. Among them, MoS2 FET shows better electrical characteristics by applying a SiO2 protective layer; WSe2 FET is fabricated based on a new low pressure chemical vapor deposition (LPCVD) method; BP FET acquires high on/off ratio and high hole mobility by using a simple dry transfer method. Those novel non-graphene materials inspire new design and fabrication process of basic logic device.

AB - In this paper, field effect transistors (FET) based on different kinds of non-graphene materials are introduced, which are MoS2, WSe2 and black phosphorus (BP). Those devices have their unique features in fabrication process compared with conventional FETs. Among them, MoS2 FET shows better electrical characteristics by applying a SiO2 protective layer; WSe2 FET is fabricated based on a new low pressure chemical vapor deposition (LPCVD) method; BP FET acquires high on/off ratio and high hole mobility by using a simple dry transfer method. Those novel non-graphene materials inspire new design and fabrication process of basic logic device.

KW - chemical vapor deposition (CVD) (deposition)

KW - electronic structure

KW - Raman spectroscopy

UR - https://www.scopus.com/pages/publications/85047373334

U2 - 10.1557/adv.2017.417

DO - 10.1557/adv.2017.417

M3 - Article

AN - SCOPUS:85047373334

SN - 2059-8521

VL - 2

SP - 3675

EP - 3684

JO - MRS Advances

JF - MRS Advances

IS - 60

ER -

Novel Field Effect Transistor Fabrication Based on Non-Graphene 2D Materials

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Keywords

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