Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4 /PMN-PT (011)

Ming Liu; Jason Hoffman; Jing Wang; Jinxing Zhang; Brittany Nelson-Cheeseman; Anand Bhattacharya

doi:10.1038/srep01876

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe₃O₄ /PMN-PT (011)

Ming Liu^*, Jason Hoffman, Jing Wang, Jinxing Zhang, Brittany Nelson-Cheeseman, Anand Bhattacharya

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

140 Citations (Scopus)

Abstract

A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg _1/3Nb_2/3)O₃-0.29PbTiO₃ (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe₃O₄ films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe₃O ₄ up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

Original language	English
Article number	1876
Journal	Scientific Reports
Volume	3
DOIs	https://doi.org/10.1038/srep01876
Publication status	Published - 2013
Externally published	Yes

Access to Document

10.1038/srep01876

Cite this

@article{39156c5902dc46b99a45c7b3279b901c,

title = "Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4 /PMN-PT (011)",

abstract = "A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg 1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O 4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.",

author = "Ming Liu and Jason Hoffman and Jing Wang and Jinxing Zhang and Brittany Nelson-Cheeseman and Anand Bhattacharya",

year = "2013",

doi = "10.1038/srep01876",

language = "English",

volume = "3",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4 /PMN-PT (011)

AU - Liu, Ming

AU - Hoffman, Jason

AU - Wang, Jing

AU - Zhang, Jinxing

AU - Nelson-Cheeseman, Brittany

AU - Bhattacharya, Anand

PY - 2013

Y1 - 2013

N2 - A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg 1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O 4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

AB - A central goal of electronics based on correlated materials or 'Mottronics' is the ability to switch between distinct collective states with a control voltage. Small changes in structure and charge density near a transition can tip the balance between competing phases, leading to dramatic changes in electronic and magnetic properties. In this work, we demonstrate that an electric field induced two-step ferroelastic switching pathway in (011) oriented 0.71Pb(Mg 1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates can be used to tune the Verwey metal-insulator transition in epitaxial Fe3O4 films in a stable and reversible manner. We also observe robust non-volatile resistance switching in Fe3O 4 up to room temperature, driven by ferroelastic strain. These results provides a framework for realizing non-volatile and reversible tuning of order parameters coupled to lattice-strain in epitaxial oxide heterostructures over a broad range of temperatures, with potential device applications.

UR - http://www.scopus.com/inward/record.url?scp=84878727562&partnerID=8YFLogxK

U2 - 10.1038/srep01876

DO - 10.1038/srep01876

M3 - Article

AN - SCOPUS:84878727562

SN - 2045-2322

VL - 3

JO - Scientific Reports

JF - Scientific Reports

M1 - 1876

ER -

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe₃O₄ /PMN-PT (011)

Abstract

Access to Document

Other files and links

Fingerprint

Cite this