Near-infrared photodetector based on Schottky junctions of monolayer graphene/GeOI

Anli Xu; Siwei Yang; Zhiduo Liu; Gongjin Li; Jiurong Li; Ya Li; Da Chen; Qinglei Guo; Gang Wang; Guqiao Ding

doi:10.1016/j.matlet.2018.04.107

Near-infrared photodetector based on Schottky junctions of monolayer graphene/GeOI

Anli Xu
, Siwei Yang
, Zhiduo Liu
, Gongjin Li
, Jiurong Li
, Ya Li
, Da Chen^*
, Qinglei Guo
, Gang Wang
, Guqiao Ding

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The peculiar properties of the large absorption coefficient at near-infrared frequencies as well as their high mobility in germanium enable promising applications in photodetection. Schottky junctions based near-infrared photodetectors were fabricated by integrating monolayer graphene film with germanium membranes stacking on silicon oxide substrates (i.e., GeOI). The device exhibits a strong photovoltaic behavior, giving rise to high responsivity and detectivity of ∼62.1 mA W⁻¹ and ∼2.1 × 10¹¹ cm Hz¹ ^/ ² W⁻¹, respectively. Time-response results indicate that the device could operate with the frequency up to 1 kHz. Our work may pave the way for exploiting graphene/GeOI Schottky junctions as the high-performance optoelectronic devices.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Materials Letters
Volume	227
DOIs	https://doi.org/10.1016/j.matlet.2018.04.107
Publication status	Published - 15 Sept 2018
Externally published	Yes

Keywords

Carbon materials
Graphene
Photodetector
Schottky junction
Semiconductors

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.matlet.2018.04.107

Cite this

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title = "Near-infrared photodetector based on Schottky junctions of monolayer graphene/GeOI",

abstract = "The peculiar properties of the large absorption coefficient at near-infrared frequencies as well as their high mobility in germanium enable promising applications in photodetection. Schottky junctions based near-infrared photodetectors were fabricated by integrating monolayer graphene film with germanium membranes stacking on silicon oxide substrates (i.e., GeOI). The device exhibits a strong photovoltaic behavior, giving rise to high responsivity and detectivity of ∼62.1 mA W−1 and ∼2.1 × 1011 cm Hz1 / 2 W−1, respectively. Time-response results indicate that the device could operate with the frequency up to 1 kHz. Our work may pave the way for exploiting graphene/GeOI Schottky junctions as the high-performance optoelectronic devices.",

keywords = "Carbon materials, Graphene, Photodetector, Schottky junction, Semiconductors",

author = "Anli Xu and Siwei Yang and Zhiduo Liu and Gongjin Li and Jiurong Li and Ya Li and Da Chen and Qinglei Guo and Gang Wang and Guqiao Ding",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = sep,

day = "15",

doi = "10.1016/j.matlet.2018.04.107",

language = "English",

volume = "227",

pages = "17--20",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Near-infrared photodetector based on Schottky junctions of monolayer graphene/GeOI

AU - Xu, Anli

AU - Yang, Siwei

AU - Liu, Zhiduo

AU - Li, Gongjin

AU - Li, Jiurong

AU - Li, Ya

AU - Chen, Da

AU - Guo, Qinglei

AU - Wang, Gang

AU - Ding, Guqiao

PY - 2018/9/15

Y1 - 2018/9/15

N2 - The peculiar properties of the large absorption coefficient at near-infrared frequencies as well as their high mobility in germanium enable promising applications in photodetection. Schottky junctions based near-infrared photodetectors were fabricated by integrating monolayer graphene film with germanium membranes stacking on silicon oxide substrates (i.e., GeOI). The device exhibits a strong photovoltaic behavior, giving rise to high responsivity and detectivity of ∼62.1 mA W−1 and ∼2.1 × 1011 cm Hz1 / 2 W−1, respectively. Time-response results indicate that the device could operate with the frequency up to 1 kHz. Our work may pave the way for exploiting graphene/GeOI Schottky junctions as the high-performance optoelectronic devices.

AB - The peculiar properties of the large absorption coefficient at near-infrared frequencies as well as their high mobility in germanium enable promising applications in photodetection. Schottky junctions based near-infrared photodetectors were fabricated by integrating monolayer graphene film with germanium membranes stacking on silicon oxide substrates (i.e., GeOI). The device exhibits a strong photovoltaic behavior, giving rise to high responsivity and detectivity of ∼62.1 mA W−1 and ∼2.1 × 1011 cm Hz1 / 2 W−1, respectively. Time-response results indicate that the device could operate with the frequency up to 1 kHz. Our work may pave the way for exploiting graphene/GeOI Schottky junctions as the high-performance optoelectronic devices.

KW - Carbon materials

KW - Graphene

KW - Photodetector

KW - Schottky junction

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/85046833672

U2 - 10.1016/j.matlet.2018.04.107

DO - 10.1016/j.matlet.2018.04.107

M3 - Article

AN - SCOPUS:85046833672

SN - 0167-577X

VL - 227

SP - 17

EP - 20

JO - Materials Letters

JF - Materials Letters

ER -

Near-infrared photodetector based on Schottky junctions of monolayer graphene/GeOI

Abstract

Keywords

UN SDGs

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