Nanosheet-based complementary transistors with a 48 nm pitch

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Access to Document

@article{793bfa96e3644c81a788c46b7b84d816,

title = "Nanosheet-based complementary transistors with a 48 nm pitch",

author = "Yeliang Wang",

year = "2023",

month = dec,

doi = "10.1038/s41928-023-01090-z",

language = "English",

volume = "6",

pages = "933--934",

journal = "Nature Electronics",

issn = "2520-1131",

publisher = "Nature Publishing Group",

number = "12",

}

TY - JOUR

T1 - Nanosheet-based complementary transistors with a 48 nm pitch

AU - Wang, Yeliang

PY - 2023/12

Y1 - 2023/12

UR - http://www.scopus.com/inward/record.url?scp=85179339782&partnerID=8YFLogxK

U2 - 10.1038/s41928-023-01090-z

DO - 10.1038/s41928-023-01090-z

M3 - Article

AN - SCOPUS:85179339782

SN - 2520-1131

VL - 6

SP - 933

EP - 934

JO - Nature Electronics

JF - Nature Electronics

IS - 12

ER -