TY - JOUR
T1 - Nano-adhesion influenced by atomic-scale asperities
T2 - A molecular dynamics simulation study
AU - Si, Lina
AU - Wang, Xiaoli
N1 - Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.
PY - 2014/10/30
Y1 - 2014/10/30
N2 - The effect of atomic-scale surface roughness on the adhesion between a spherical tip and single asperities with varying radii and heights situated on a flat surface has been investigated by using the molecular dynamics (MD) simulation method in this work. The simulation results are also compared with the theoretical predications, i.e., Rumpf and Rabinovich models. The normal forces versus separation curves are analyzed thoroughly, from which the van der Waals (vdW) force (F vdW ) and the adhesive force (F adh ) are obtained. The effects of the indentation velocity and the silicon crystallographic orientation on the contact processes have also been discussed. The results indicate that both F vdW and F adh decrease dramatically with the introduction of nano-asperity in comparison to the smooth substrate without the asperity, e.g., more than 90% drop in both F vdW and F adh when asperity radius/tip radius (r/R) is 0.05. The influence of the asperity height on F vdW and F adh can be very important when height/radius of spherical cap asperity (y max /r 0 ) is less than 0.5. Furthermore, the discrepancies between the adhesion forces obtained through MD simulation and these calculated with existing Rumpf and Rabinovich models have been discussed.
AB - The effect of atomic-scale surface roughness on the adhesion between a spherical tip and single asperities with varying radii and heights situated on a flat surface has been investigated by using the molecular dynamics (MD) simulation method in this work. The simulation results are also compared with the theoretical predications, i.e., Rumpf and Rabinovich models. The normal forces versus separation curves are analyzed thoroughly, from which the van der Waals (vdW) force (F vdW ) and the adhesive force (F adh ) are obtained. The effects of the indentation velocity and the silicon crystallographic orientation on the contact processes have also been discussed. The results indicate that both F vdW and F adh decrease dramatically with the introduction of nano-asperity in comparison to the smooth substrate without the asperity, e.g., more than 90% drop in both F vdW and F adh when asperity radius/tip radius (r/R) is 0.05. The influence of the asperity height on F vdW and F adh can be very important when height/radius of spherical cap asperity (y max /r 0 ) is less than 0.5. Furthermore, the discrepancies between the adhesion forces obtained through MD simulation and these calculated with existing Rumpf and Rabinovich models have been discussed.
KW - MEMS/NEMS
KW - Molecular dynamics simulation
KW - Nanoadhesion
KW - Roughness
UR - http://www.scopus.com/inward/record.url?scp=84908181425&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2014.07.192
DO - 10.1016/j.apsusc.2014.07.192
M3 - Article
AN - SCOPUS:84908181425
SN - 0169-4332
VL - 317
SP - 710
EP - 717
JO - Applied Surface Science
JF - Applied Surface Science
ER -