@inproceedings{01a817122de64bc58e0f7f8a03f5a22f,
title = "Multilayer Nitride-based Memristors with Alscn Interlayer for Memory and Neuromorphic Computing Applications",
abstract = "Nitride-based memristors are known for remarkable properties, including high on/off ratio, rapid switching speed, and seamless compatibility with CMOS processes. In this study, we introduce a multilayer nitride-based memristor with a stacked composition of AIN/AIScN/AIN, showcasing enhanced bipolar resistive switching characteristics. This novel design features AIScN as an interlayer within the AIN matrix, establishing a triple-stacked structure. The built-in electric field, generated by the ferroelectric polarization of the AlScN layer, effectively hinders the migration of electrons and ions within the AIN layer. Such memristors will exhibit promising potential applications in next-generation non-volatile memory and neuromorphic computing technologies.",
keywords = "AlScN, Memristor, Multilayer, Nitride",
author = "Yang Yang and Qilin Hua",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025 ; Conference date: 13-06-2025 Through 15-06-2025",
year = "2025",
doi = "10.1109/EDSSC64492.2025.11183530",
language = "English",
series = "Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "157--158",
booktitle = "Proceedings of the 16th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2025",
address = "United States",
}