Multi-Gigabit RF-DAC Based Duobinary/PAM-3 Modulator in 130 nm SiGe HBT

  • Frida Strombeck*
  • , Zhongxia Simon He
  • , Herbert Zirath
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work a combined duobinary and PAM-3 (Pulse Amplitude Modulation) modulator is designed and fabricated using a 130 nm silicon germanium process. The RF-DAC based duobinary/PAM-3 modulator covers 95 GHz of bandwidth between 35 GHz and 130 GHz and uses three-valued logic. Together with a power detector, high data rate links can be realized without carrier recovery or phase recovery, thus simplifying the overall design. Data rates up to 30 Gbps is demonstrated using duobinary modulation with a symbol error rate (SER) of 6.4 * 10-6. For PAM-3 modulation data rates up to 28 Gbps is demonstrated with a SER of 1.4 * 10-6. The wide bandwidth and high data rate makes it suitable to be used together with a polymer microwave fiber (PMF) for a low cost and robust system, instead of optic fiber.

Original languageEnglish
Title of host publicationEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages257-260
Number of pages4
ISBN (Electronic)9782874870606
Publication statusPublished - 10 Jan 2021
Externally publishedYes
Event15th European Microwave Integrated Circuits Conference, EuMIC 2020 - Utrecht, Netherlands
Duration: 11 Jan 202112 Jan 2021

Publication series

NameEuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

Conference

Conference15th European Microwave Integrated Circuits Conference, EuMIC 2020
Country/TerritoryNetherlands
CityUtrecht
Period11/01/2112/01/21

Keywords

  • Duobinary
  • modulator
  • pulse amplitude modulation
  • RF-DAC
  • SiGe
  • ternary

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