@inproceedings{d324262b8ad64d16905d21c5191764e6,
title = "MoS2-WS2Heterostructure-Enabled Optoelectronic Synaptic Diode",
abstract = "We report an optoelectronic synaptic diode based on a vertically stacked MoS2-WS2 van der Waals heterostructure. This diode demonstrates outstanding rectification characteristic, achieving a rectification ratio of up to 4.2×103. A remarkable persistent photocurrent is observed under white light illumination, attributed to the presence of charged dielectric surface trap states. Benefitting from such photo-induced memory behavior, optoelectronic synaptic plasticity such as short-term and long-term plasticity can be emulated by as-fabricated MoS2-WS2 heterostructure under various light stimuli. Moreover, a high linearity of synaptic weight updating is achieved with increasing light power, which further demonstrates its great potential in artificial neural networks for image processing.",
keywords = "Band alignment, Diode, Synaptic plasticity, Two-dimensional materials, Van der Waals heterostructure",
author = "Mingjie Li and Yingtao Ding and Jianzhi Hu and Hankun Zhao and Yilin Sun",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024 ; Conference date: 22-10-2024 Through 25-10-2024",
year = "2024",
doi = "10.1109/ICSICT62049.2024.10831143",
language = "English",
series = "2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Fan Ye and Xiaona Zhu and Tang, \{Ting Ao\}",
booktitle = "2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024",
address = "United States",
}