Morphology dependence of interfacial oxidation states of gallium arsenide under near ambient conditions

The manipulation of semiconductor surfaces by tuning their electronic properties and surface chemistry is an essential ingredient for key applications in areas such as electronics, sensors, and photovoltaic devices. Here, in-situ surface reactions on gallium arsenide (GaAs) are monitored for two morphologies: a simple planar crystalline surface with (100) orientation and an ensemble of GaAs nanowires, both exposed to oxygen environment. A variety of oxide surface species, with a significant enhancement in oxidation states in the case of nanowires, are detected via near ambient pressure X-ray photoelectron spectroscopy. This enhancement in oxidation of GaAs nanowires is due to their higher surface area and the existence of more active sites for O₂ dissociation.