TY - JOUR
T1 - Monitoring the Material Quality of Two-Dimensional Transition Metal Dichalcogenides
AU - Wang, Jinhuan
AU - Huang, Chen
AU - You, Yilong
AU - Guo, Quanlin
AU - Xue, Guodong
AU - Hong, Hao
AU - Jiao, Qingze
AU - Yu, Dapeng
AU - Du, Lena
AU - Zhao, Yun
AU - Liu, Kaihui
N1 - Publisher Copyright:
© 2022 American Chemical Society
PY - 2022/3/3
Y1 - 2022/3/3
N2 - Two-dimensional (2D) transition metal dichalcogenides (TMDs), with atomic thickness, strong spin-orbit coupling, enhanced light-matter interactions. and facile quantum control ability, have demonstrated great potential in the applications of nanoelectronics and optoelectronics. The realization of these high-performance applications strongly relies on the production of large-scale TMD films with high quality. Therefore, facile and accurate quality monitoring of TMDs is essential for their future applications. In this Review, we summarized the main defect types in TMD crystals obtained by different synthesis methods, and we discussed recent cutting-edge characterization techniques, including scanning transmission electron microscopy, etching or adsorption, optical spectroscopy, and field-effect transistors. Finally, we provide a short perspective on the future development of quality monitoring techniques for broad 2D materials.
AB - Two-dimensional (2D) transition metal dichalcogenides (TMDs), with atomic thickness, strong spin-orbit coupling, enhanced light-matter interactions. and facile quantum control ability, have demonstrated great potential in the applications of nanoelectronics and optoelectronics. The realization of these high-performance applications strongly relies on the production of large-scale TMD films with high quality. Therefore, facile and accurate quality monitoring of TMDs is essential for their future applications. In this Review, we summarized the main defect types in TMD crystals obtained by different synthesis methods, and we discussed recent cutting-edge characterization techniques, including scanning transmission electron microscopy, etching or adsorption, optical spectroscopy, and field-effect transistors. Finally, we provide a short perspective on the future development of quality monitoring techniques for broad 2D materials.
UR - https://www.scopus.com/pages/publications/85125411568
U2 - 10.1021/acs.jpcc.2c00051
DO - 10.1021/acs.jpcc.2c00051
M3 - Review article
AN - SCOPUS:85125411568
SN - 1932-7447
VL - 126
SP - 3797
EP - 3810
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 8
ER -