Monitoring energy-dependent ultrafast laser manufacturing inside gallium arsenide by fluorescence imaging

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultrafast laser processing inside semiconductor materials faces the challenge of energy nonlinear transmission saturation, and it is difficult to observe the behavior of low-density plasma outside the focus region by traditional pump-detection technology. In this study, laser-induced plasma fluorescence imaging technology is used to visualize the low-density plasma in the pre-focal region of gallium arsenide (GaAs). By analyzing the relationship between fluorescence distribution and laser energy, the influence mechanism of incident energy on the actual energy flow at the focal point is revealed, and the simulation results further verify the process. This work provides a new way for quantitative evaluation of laser energy transfer in semiconductor materials.

Original languageEnglish
Title of host publication11th International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2025
EditorsXiangang Luo, Costas Fotakis, Koji Sugioka, Jinghua Teng
PublisherSPIE
ISBN (Electronic)9781510699311
DOIs
Publication statusPublished - 13 Jan 2026
Externally publishedYes
Event11th International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2025 - Chengdu, China
Duration: 20 Jul 202522 Jul 2025

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume13992
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference11th International Symposium on Advanced Optical Manufacturing and Testing Technologies, AOMATT 2025
Country/TerritoryChina
CityChengdu
Period20/07/2522/07/25

Keywords

  • Micro/nano fabrication
  • fluorescence imaging
  • low-density plasma
  • ultrafast laser

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