Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review

L. Gerrer; J. Ding; S. M. Amoroso; F. Adamu-Lema; R. Hussin; D. Reid; C. Millar; A. Asenov

doi:10.1016/j.microrel.2014.01.024

Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review

L. Gerrer^*, J. Ding, S. M. Amoroso, F. Adamu-Lema, R. Hussin, D. Reid, C. Millar, A. Asenov

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

In this paper we summarize the impact of Statistical Variability (SV) on device performances and study the impact of oxide trapped charges in combination with SV. Traps time constants are described and analysed in combination with SV and time dependent simulations are performed including SV, random traps and charge injection stochasticity. Finally we demonstrate the necessity of statistical simulations in extracting compact models of aged devices and we address the problem of aged SRAM cell reliability.

Original language	English
Pages (from-to)	682-697
Number of pages	16
Journal	Microelectronics Reliability
Volume	54
Issue number	4
DOIs	https://doi.org/10.1016/j.microrel.2014.01.024
Publication status	Published - Apr 2014
Externally published	Yes

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10.1016/j.microrel.2014.01.024

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abstract = "In this paper we summarize the impact of Statistical Variability (SV) on device performances and study the impact of oxide trapped charges in combination with SV. Traps time constants are described and analysed in combination with SV and time dependent simulations are performed including SV, random traps and charge injection stochasticity. Finally we demonstrate the necessity of statistical simulations in extracting compact models of aged devices and we address the problem of aged SRAM cell reliability.",

author = "L. Gerrer and J. Ding and Amoroso, {S. M.} and F. Adamu-Lema and R. Hussin and D. Reid and C. Millar and A. Asenov",

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T2 - A review

AU - Gerrer, L.

AU - Ding, J.

AU - Amoroso, S. M.

AU - Adamu-Lema, F.

AU - Hussin, R.

AU - Reid, D.

AU - Millar, C.

AU - Asenov, A.

PY - 2014/4

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AB - In this paper we summarize the impact of Statistical Variability (SV) on device performances and study the impact of oxide trapped charges in combination with SV. Traps time constants are described and analysed in combination with SV and time dependent simulations are performed including SV, random traps and charge injection stochasticity. Finally we demonstrate the necessity of statistical simulations in extracting compact models of aged devices and we address the problem of aged SRAM cell reliability.

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DO - 10.1016/j.microrel.2014.01.024

M3 - Article

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Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review

Abstract

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