@inproceedings{dedc617d6a79403995f92891ec4631ce,
title = "Mobility-enhanced FET and Wakeup-free Ferroelectric Capacitor Enabled by Sn-doped InGaZnO for 3D Embedded RAM Application",
abstract = "We have developed and integrated mobility-enhanced FET and wakeup-free ferroelectric capacitor by using Sn-doped InGaZnO, and demonstrated 1T1C FeRAM cell operation for 3D embedded RAM application, for the first time. We have also studied the impact of thin-film access transistor on 1T1C cell operation, and investigated the physics of mobility enhancement. The proposed memory technology will enable high-density and energy-efficient computing by the proximity of processor core and memory in monolithic 3D integration.",
author = "Jixuan Wu and Fei Mo and Takuya Saraya and Toshiro Hiramoto and Mototaka Ochi and Hiroshi Goto and Masaharu Kobayashi",
note = "Publisher Copyright: {\textcopyright} 2021 JSAP; 41st Symposium on VLSI Technology, VLSI Technology 2021 ; Conference date: 13-06-2021 Through 19-06-2021",
year = "2021",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 Symposium on VLSI Technology, VLSI Technology 2021",
address = "United States",
}