Millimeter-wave on-chip dual-band bandpass filter using multi-stub resonator in GaAs technology

  • Yanbin Chen
  • , Yongzheng Li
  • , Bingyan Zhou*
  • , Yiqun Liu
  • , Qi Liu
  • , Kai Da Xu*
  • , Cheng Jin
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

An on-chip dual-band bandpass filter (BPF) with wide bandwidth and low insertion loss is designed using 0.25-μm gallium arsenide (GaAs) technology. The proposed BPF is based on a multi-stub resonator (MSR) consisting of an open-circuited resonator loaded with a T-shaped open stub and a pair of L-shaped open stubs, which together generate four resonant modes to enhance the filtering performance. The resonant frequencies can be conveniently tuned by adjusting the geometric parameters. For demonstration, an on-chip dual-band BPF operating at 61.7 GHz and 94.5 GHz was fabricated and measured, achieving 3-dB fractional bandwidths (FBWs) of 35.1 % and 24.4 %, respectively. The measured in-band insertion losses are below 1.1 dB and 1.2 dB, with return losses greater than 20 dB. The overall circuit occupies only 0.356 × 0.252 mm2, excluding input and output pads.

Original languageEnglish
Article number107031
JournalMicroelectronics Journal
Volume169
DOIs
Publication statusPublished - Mar 2026
Externally publishedYes

Keywords

  • Bandpass filter (BPF)
  • Dual-band
  • Gallium arsenide (GaAs)
  • Millimeter-wave
  • On-chip filter

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