Microscopic study of thermoelectric In-doped SnTe

  • Pengfei Nan
  • , Ruibin Liu*
  • , Yunjie Chang
  • , Hongbo Wu
  • , Yumei Wang
  • , Richeng Yu
  • , Jun Shen
  • , Wei Guo
  • , Binghui Ge
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

SnTe is a p-type thermoelectric material that is isostructural with PbTe, for which it is a potential environmentally friendly replacement. By doping the SnTe lattice with In, the thermal conductivity of SnTe can be significantly reduced and the thermoelectric conversion efficiency improved. A large number of precipitates were present in the In-doped SnTe samples; based on atomic-resolution high-angle annular dark-field images and electron energy loss spectra, these precipitates were identified as the zinc-blende phase of In2Te3. Through geometry phase analysis, a new phonon scattering mechanism is discussed.

Original languageEnglish
Article number26LT01
JournalNanotechnology
Volume29
Issue number26
DOIs
Publication statusPublished - 27 Apr 2018

Keywords

  • HAADF
  • SnTe
  • geometry phase analysis
  • inversion domain

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