MEMS红外图像转换芯片热力学性质研究

The MEMS infrared transducer is a direct radiation device which converts visible light into infrared radiation and can be used in infrared scene simulator. The thermal properties of MEMS infrared transducer are investigated. Compared with the standard blackbody radiation spectrum, the detected results indicate that the transducer is almost a standard blackbody and has an average emissivity of 0.638 in the infrared band. The in-plane thermal conductivity of the transducer is studied by line diffusion function. It is demonstrated that the thermal diffusion distance decreases with the decrease of the thickness of the substrate. Moreover, its thermal conductivity can be effectively reduced by employing periodic pixel arrays on the substrate. The thermal conductivity of the pixel-inscribed transducer with a substrate thickness of 360 nm is 0.1 W/m•K. The transient characteristics of the transducer show that its time constant decreases with the decrease of the substrate thickness, and the value is 2.72 ms with a substrate thickness of 345nm when it is cooled to 5℃.