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Mechanically liberating polarization bubbles in van der Waals ferroelectrics

  • Xingan Jiang
  • , Tingjun Wang
  • , Yixuan Zhang
  • , Zunyi Deng
  • , Xiangping Zhang
  • , Ruixue Zhu
  • , Jiaqian Kang
  • , Xiangdong Yang
  • , Xue Chen
  • , Xiaolei Wang
  • , Peng Gao
  • , Houbing Huang
  • , Xidong Duan
  • , Sang Wook Cheong
  • , Xueyun Wang*
  • , Weiyou Yang*
  • , Jiawang Hong*
  • *Corresponding author for this work
  • Beijing Institute of Technology
  • Ningbo University of Technology
  • Peking University
  • CAS - Institute of Semiconductors
  • Beijing University of Technology
  • Hunan University
  • Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journalArticlepeer-review

Abstract

Ferroelectric topological textures have sparked intensive interest, due to their exciting applications in a new era of non-volatile and ultrahigh-density information storage. However, these textures remain largely dependent on the given heterostructures with engineered neighbouring layers to balance the competing energies. Here we report high-density polarization bubbles in van der Waals ferroelectric crystals CuInP2S6, without the need for a spatially confined heterostructure. From piezoresponse force microscopy, it is observed that the formation and distribution of bubble domains exist in the inherent coexistence of polar phases. Crucially, the phase ratio can be facilely tailored by external stimuli such as mechanical force, enabling the labyrinth domains to be manipulated into high-density isolated bubbles through a mechanism involving polar phase competition and flexoelectricity, as revealed through density functional theory and phase-field modelling. Our findings not only provide insights into the creation of topological structures in a controlled manner but also demonstrate potential memory applications based on bubble domains in van der Waals ferroelectrics.

Original languageEnglish
Pages (from-to)1942-1948
Number of pages7
JournalNature Materials
Volume24
Issue number12
DOIs
Publication statusPublished - Dec 2025
Externally publishedYes

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