Measurement of beta particles induced electron-hole pairs recombination in depletion region of GaAs PN junction

Hai Yang Chen; Lan Jiang; Da Rang Li

doi:10.1088/0256-307X/28/5/058101

Measurement of beta particles induced electron-hole pairs recombination in depletion region of GaAs PN junction

Hai Yang Chen^*, Lan Jiang, Da Rang Li

^*Corresponding author for this work

School of Mechanical Engineering

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P⁺PN⁺ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

Original language	English
Article number	058101
Journal	Chinese Physics Letters
Volume	28
Issue number	5
DOIs	https://doi.org/10.1088/0256-307X/28/5/058101
Publication status	Published - May 2011

Access to Document

10.1088/0256-307X/28/5/058101

Cite this

@article{c63dc76c01e4433c9af153270ba65519,

title = "Measurement of beta particles induced electron-hole pairs recombination in depletion region of GaAs PN junction",

abstract = "PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.",

author = "Chen, {Hai Yang} and Lan Jiang and Li, {Da Rang}",

year = "2011",

month = may,

doi = "10.1088/0256-307X/28/5/058101",

language = "English",

volume = "28",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - Measurement of beta particles induced electron-hole pairs recombination in depletion region of GaAs PN junction

AU - Chen, Hai Yang

AU - Jiang, Lan

AU - Li, Da Rang

PY - 2011/5

Y1 - 2011/5

N2 - PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

AB - PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P+PN+ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2μm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

UR - http://www.scopus.com/inward/record.url?scp=79955883623&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/28/5/058101

DO - 10.1088/0256-307X/28/5/058101

M3 - Article

AN - SCOPUS:79955883623

SN - 0256-307X

VL - 28

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 5

M1 - 058101

ER -

Measurement of beta particles induced electron-hole pairs recombination in depletion region of GaAs PN junction

Abstract

Access to Document

Other files and links

Fingerprint

Cite this