Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

Jingchun Wang; Floriano Cuccureddu; Rafael Ramos; Cormac O. Coileain; Igor V. Shvets; Han Chun Wu

doi:10.1142/S2010324719500048

Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

Jingchun Wang
, Floriano Cuccureddu
, Rafael Ramos
, Cormac O. Coileain
, Igor V. Shvets
, Han Chun Wu^*

^*Corresponding author for this work

School of Physics

Beijing Institute of Technology
Beijing No. 4 High School
Trinity College Dublin

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

Original language	English
Article number	1950004
Journal	SPIN
Volume	9
Issue number	1
DOIs	https://doi.org/10.1142/S2010324719500048
Publication status	Published - 1 Mar 2019

Keywords

Domain wall
magnetoresistance
nanowire

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10.1142/S2010324719500048

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title = "Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires",

abstract = "We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7\% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.",

keywords = "Domain wall, magnetoresistance, nanowire",

author = "Jingchun Wang and Floriano Cuccureddu and Rafael Ramos and Coileain, \{Cormac O.\} and Shvets, \{Igor V.\} and Wu, \{Han Chun\}",

note = "Publisher Copyright: {\textcopyright} 2019 World Scientific Publishing Company.",

year = "2019",

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doi = "10.1142/S2010324719500048",

language = "English",

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T1 - Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

AU - Wang, Jingchun

AU - Cuccureddu, Floriano

AU - Ramos, Rafael

AU - Coileain, Cormac O.

AU - Shvets, Igor V.

AU - Wu, Han Chun

PY - 2019/3/1

Y1 - 2019/3/1

N2 - We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

AB - We present the possibility of enhancing magnetoresistance (MR) by controlling nanoscale domain wall (DW) width in a planar nanowire array. Results based on micromagnetic calculations show that DW width decreases with increasing exchange bias field and decreases with reducing exchange interaction between neighboring nanowires. Fe/Fe3O4 nanowire arrays were grown on c-plane sapphire to demonstrate the feasibility of this concept, and an enhanced MR ratio of 3.7% was observed at room temperature. compared with flat and stepped Fe3O4 thin films.

KW - Domain wall

KW - magnetoresistance

KW - nanowire

UR - https://www.scopus.com/pages/publications/85062670035

U2 - 10.1142/S2010324719500048

DO - 10.1142/S2010324719500048

M3 - Article

AN - SCOPUS:85062670035

SN - 2010-3247

VL - 9

JO - SPIN

JF - SPIN

IS - 1

M1 - 1950004

ER -

Magnetoresistance of Nanoscale Domain Walls Formed in Arrays of Parallel Nanowires

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Keywords

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