Magnetoresistance of Fe3 O4 -graphene- Fe3 O4 junctions

Zhi Min Liao; Han Chun Wu; Jing Jing Wang; Graham L.W. Cross; Shishir Kumar; Igor V. Shvets; Georg S. Duesberg

doi:10.1063/1.3552679

Magnetoresistance of Fe₃ O₄ -graphene- Fe₃ O₄ junctions

Zhi Min Liao^*, Han Chun Wu, Jing Jing Wang, Graham L.W. Cross, Shishir Kumar, Igor V. Shvets, Georg S. Duesberg

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

The magnetoresistance (MR) of Fe₃ O₄ -graphene- Fe₃ O₄ junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe₃ O₄ /graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field.

Original language	English
Article number	052511
Journal	Applied Physics Letters
Volume	98
Issue number	5
DOIs	https://doi.org/10.1063/1.3552679
Publication status	Published - 31 Jan 2011
Externally published	Yes

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abstract = "The magnetoresistance (MR) of Fe3 O4 -graphene- Fe3 O4 junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe3 O4 /graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field.",

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AU - Liao, Zhi Min

AU - Wu, Han Chun

AU - Wang, Jing Jing

AU - Cross, Graham L.W.

AU - Kumar, Shishir

AU - Shvets, Igor V.

AU - Duesberg, Georg S.

PY - 2011/1/31

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N2 - The magnetoresistance (MR) of Fe3 O4 -graphene- Fe3 O4 junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe3 O4 /graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field.

AB - The magnetoresistance (MR) of Fe3 O4 -graphene- Fe3 O4 junctions has been experimentally studied at different temperatures. It is found that a barrier exists at the Fe3 O4 /graphene interface. The existence of the interfacial barrier was further confirmed by the nonlinear I-V characteristics and nonmetallic temperature dependence of the interfacial resistance. Moreover, spin dependent transport at the interfaces contributes -1.6% MR to the whole device at room temperature and can be regulated by an external electric field.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

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ER -

Magnetoresistance of Fe₃ O₄ -graphene- Fe₃ O₄ junctions

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