Magnetic and transport properties of a ferromagnetic layered semiconductor MnIn₂Se₄

Magnetic two-dimensional (2D) materials hold considerable promise for the next generation of spintronic devices. In this study, a ternary 2D layered semiconductor compound, MnIn₂Se₄, with good photoelectric properties and low-temperature ferromagnetism is introduced. Field-effect transistors based on few-layer MnIn₂Se₄ exhibit n-type characteristics, with a high on-off ratio of up to 450 times, and exhibit a good photoresponse with an on-off ratio of 25 times. Magnetic measurements show that few-layer MnIn₂Se₄ exhibits ferromagnetic behavior with a perpendicular anisotropy at 2 K and a Curie temperature of ∼7 K. This study suggests that MnIn₂Se₄ has potential in applications involving magnetic and optoelectronic devices.